Growth of defect-free InAs nanowires using Pd catalyst

H. Y. Xu; Y. N. Guo; Z. M. Liao; J. Zou; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472345

Growth of defect-free InAs nanowires using Pd catalyst

H. Y. Xu
, Y. N. Guo
, Z. M. Liao
, J. Zou^*
, Q. Gao
, H. H. Tan
, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

To explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111 side-facets. The common nanowire/catalyst interface is found to be the unusual 113 planes of the nanowires.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Publisher	IEEE
Pages	31-32
Number of pages	2
ISBN (Print)	9781467330459
DOIs	https://doi.org/10.1109/COMMAD.2012.6472345
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

Access to Document

10.1109/COMMAD.2012.6472345

Cite this

@inproceedings{f37d5423da7a41bba332854043f9017e,

title = "Growth of defect-free InAs nanowires using Pd catalyst",

abstract = "To explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111 side-facets. The common nanowire/catalyst interface is found to be the unusual 113 planes of the nanowires.",

author = "Xu, \{H. Y.\} and Guo, \{Y. N.\} and Liao, \{Z. M.\} and J. Zou and Q. Gao and Tan, \{H. H.\} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472345",

language = "English",

isbn = "9781467330459",

pages = "31--32",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

publisher = "IEEE",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Xu, HY, Guo, YN, Liao, ZM, Zou, J, Gao, Q, Tan, HH & Jagadish, C 2012, Growth of defect-free InAs nanowires using Pd catalyst. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472345, IEEE, pp. 31-32, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472345

TY - GEN

T1 - Growth of defect-free InAs nanowires using Pd catalyst

AU - Xu, H. Y.

AU - Guo, Y. N.

AU - Liao, Z. M.

AU - Zou, J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - To explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111 side-facets. The common nanowire/catalyst interface is found to be the unusual 113 planes of the nanowires.

AB - To explore the growth mechanism and the effect of non-gold catalysts in growing III-V epitaxial nanowires, InAs nanowires were grown on GaAs(111)B substrates using annealed Pd thin film as catalyst. Through detailed scanning and transmission electron microscopy (SEM/TEM) characterisations, it is found that when the catalyst size is less than 50 nm (from annealing the Pd thin film), defect-free zinc-blende structured epitaxial InAs nanowires are grown along the <110> directions with four 111 side-facets. The common nanowire/catalyst interface is found to be the unusual 113 planes of the nanowires.

UR - https://www.scopus.com/pages/publications/84875605411

U2 - 10.1109/COMMAD.2012.6472345

DO - 10.1109/COMMAD.2012.6472345

M3 - Conference Paper

SN - 9781467330459

SP - 31

EP - 32

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

PB - IEEE

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Growth of defect-free InAs nanowires using Pd catalyst

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this