Growth of GaAs nanowires using different Au catalysts

H. Y. Xu; Y. Wang; Y. N. Guo; J. Zou; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2010.5699766

Growth of GaAs nanowires using different Au catalysts

H. Y. Xu, Y. Wang, Y. N. Guo, J. Zou^*, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced in the nanowires induced by the Au thin film.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	35-36
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699766
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699766

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Xu, H. Y., Wang, Y., Guo, Y. N., Zou, J., Gao, Q., Tan, H. H., & Jagadish, C. (2010). Growth of GaAs nanowires using different Au catalysts. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 35-36). Article 5699766 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699766

@inproceedings{a19b8d1c836f4f599000dd5c3d2d61ac,

title = "Growth of GaAs nanowires using different Au catalysts",

abstract = "Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced in the nanowires induced by the Au thin film.",

author = "Xu, {H. Y.} and Y. Wang and Guo, {Y. N.} and J. Zou and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2010",

doi = "10.1109/COMMAD.2010.5699766",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "35--36",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Xu, HY, Wang, Y, Guo, YN, Zou, J, Gao, Q, Tan, HH & Jagadish, C 2010, Growth of GaAs nanowires using different Au catalysts. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699766, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 35-36, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699766

Growth of GaAs nanowires using different Au catalysts. / Xu, H. Y.; Wang, Y.; Guo, Y. N. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 35-36 5699766 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth of GaAs nanowires using different Au catalysts

AU - Xu, H. Y.

AU - Wang, Y.

AU - Guo, Y. N.

AU - Zou, J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2010

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N2 - Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced in the nanowires induced by the Au thin film.

AB - Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced in the nanowires induced by the Au thin film.

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U2 - 10.1109/COMMAD.2010.5699766

DO - 10.1109/COMMAD.2010.5699766

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 35

EP - 36

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Growth of GaAs nanowires using different Au catalysts

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