Abstract
Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced in the nanowires induced by the Au thin film.
| Original language | English |
|---|---|
| Title of host publication | 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings |
| Publisher | IEEE |
| Pages | 35-36 |
| Number of pages | 2 |
| ISBN (Print) | 9781424473328 |
| DOIs | |
| Publication status | Published - 2010 |
| Event | 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010 |
Conference
| Conference | 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 |
|---|---|
| Country/Territory | Australia |
| City | Canberra, ACT |
| Period | 12/12/10 → 15/12/10 |
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