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Growth of GaAs nanowires using different Au catalysts

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Abstract

Two different Au catalysts were used to grow GaAs epitaxial nanowires on GaAs (111)B substrates. Detailed investigations have shown that using Au thin film and annealing technique, it is possible to achieve nanowire growth with much higher density comparing to using Au nanoparticles. It is found that the tapering and lattice defects normally observed in nanowires induced by Au nanoparticles were reduced in the nanowires induced by the Au thin film.

Original languageEnglish
Title of host publication2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
PublisherIEEE
Pages35-36
Number of pages2
ISBN (Print)9781424473328
DOIs
Publication statusPublished - 2010
Event2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia
Duration: 12 Dec 201015 Dec 2010

Conference

Conference2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/TerritoryAustralia
CityCanberra, ACT
Period12/12/1015/12/10

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