Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition

Yong Kim; H. J. Joyce; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1109/LEOS.2005.1548075

Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition

Yong Kim^*, H. J. Joyce, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed.

Original language	English
Title of host publication	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	471-472
Number of pages	2
ISBN (Print)	0780392175, 9780780392175
DOIs	https://doi.org/10.1109/LEOS.2005.1548075
Publication status	Published - 2005
Event	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia Duration: 22 Oct 2005 → 28 Oct 2005

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	2005
ISSN (Print)	1092-8081

Conference

Conference	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Country/Territory	Australia
City	Sydney
Period	22/10/05 → 28/10/05

Access to Document

10.1109/LEOS.2005.1548075

Cite this

Kim, Y., Joyce, H. J., Gao, Q., Tan, H. H., & Jagadish, C. (2005). Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 (pp. 471-472). Article 1548075 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LEOS.2005.1548075

Kim, Yong ; Joyce, H. J. ; Gao, Q. et al. / Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition. 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 471-472 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

@inproceedings{7b55cd10d36c4e3a834128777ebc4d44,

title = "Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition",

abstract = "The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed.",

author = "Yong Kim and Joyce, {H. J.} and Q. Gao and Tan, {H. H.} and C. Jagadish",

year = "2005",

doi = "10.1109/LEOS.2005.1548075",

language = "English",

isbn = "0780392175",

series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "471--472",

booktitle = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005",

address = "United States",

note = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 ; Conference date: 22-10-2005 Through 28-10-2005",

}

Kim, Y, Joyce, HJ, Gao, Q, Tan, HH & Jagadish, C 2005, Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition. in 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005., 1548075, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, vol. 2005, Institute of Electrical and Electronics Engineers Inc., pp. 471-472, 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005, Sydney, Australia, 22/10/05. https://doi.org/10.1109/LEOS.2005.1548075

Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition. / Kim, Yong; Joyce, H. J.; Gao, Q. et al.
18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. Institute of Electrical and Electronics Engineers Inc., 2005. p. 471-472 1548075 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition

AU - Kim, Yong

AU - Joyce, H. J.

AU - Gao, Q.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2005

Y1 - 2005

N2 - The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed.

AB - The growth mechanism and properties of GaAs/InAs nanowires prepared by metalorganic chemical vapor deposition are investigated. Vertical InAs nanowires on GaAs (111)B substrates are successfully grown despite the large lattice mismatch (-7.2%). The crystallographic perfection of InAs nanowires is confirmed by hexagonal or triangular cross section. An interesting L-shaping of GaAs/InAs heterostructure nanowire which could be useful for novel device application is observed.

UR - http://www.scopus.com/inward/record.url?scp=33751338748&partnerID=8YFLogxK

U2 - 10.1109/LEOS.2005.1548075

DO - 10.1109/LEOS.2005.1548075

M3 - Conference contribution

SN - 0780392175

SN - 9780780392175

T3 - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SP - 471

EP - 472

BT - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

Y2 - 22 October 2005 through 28 October 2005

ER -

Kim Y, Joyce HJ, Gao Q, Tan HH , Jagadish C. Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. Institute of Electrical and Electronics Engineers Inc. 2005. p. 471-472. 1548075. (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). doi: 10.1109/LEOS.2005.1548075

Growth of GaAs/InAs vertical nanowires on GaAs (111)B by metalorganic chemical vapor deposition

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this