Growth of InP nanowires on silicon using a thin buffer layer

H. A. Fonseka; H. H. Tan; J. H. Kang; S. Paiman; Q. Gao; P. Parkinson; C. Jagadish

doi:10.1109/COMMAD.2012.6472351

Growth of InP nanowires on silicon using a thin buffer layer

H. A. Fonseka^*, H. H. Tan, J. H. Kang, S. Paiman, Q. Gao, P. Parkinson, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2^nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	43-44
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472351
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472351

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Fonseka, H. A., Tan, H. H., Kang, J. H., Paiman, S., Gao, Q., Parkinson, P., & Jagadish, C. (2012). Growth of InP nanowires on silicon using a thin buffer layer. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 43-44). Article 6472351 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472351

@inproceedings{2b3959d79d864809a94a2cdb8bb6e91f,

title = "Growth of InP nanowires on silicon using a thin buffer layer",

abstract = "InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.",

author = "Fonseka, {H. A.} and Tan, {H. H.} and Kang, {J. H.} and S. Paiman and Q. Gao and P. Parkinson and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472351",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "43--44",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Fonseka, HA, Tan, HH, Kang, JH, Paiman, S, Gao, Q, Parkinson, P & Jagadish, C 2012, Growth of InP nanowires on silicon using a thin buffer layer. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472351, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 43-44, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472351

Growth of InP nanowires on silicon using a thin buffer layer. / Fonseka, H. A.; Tan, H. H.; Kang, J. H. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 43-44 6472351 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Growth of InP nanowires on silicon using a thin buffer layer

AU - Fonseka, H. A.

AU - Tan, H. H.

AU - Kang, J. H.

AU - Paiman, S.

AU - Gao, Q.

AU - Parkinson, P.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.

AB - InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.

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U2 - 10.1109/COMMAD.2012.6472351

DO - 10.1109/COMMAD.2012.6472351

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 43

EP - 44

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Fonseka HA, Tan HH, Kang JH, Paiman S, Gao Q, Parkinson P et al. Growth of InP nanowires on silicon using a thin buffer layer. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 43-44. 6472351. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472351

Growth of InP nanowires on silicon using a thin buffer layer

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