Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

Fiacre E. Rougieux; Hieu T. Nguyen; D. H. Macdonald; Bernhard Mitchell; Robert Falster

doi:10.1109/JPHOTOV.2017.2678840

Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

Fiacre E. Rougieux, Hieu T. Nguyen, D. H. Macdonald, Bernhard Mitchell, Robert Falster

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates. Finally, we demonstrate the impact of nonequilibrium point defect concentrations on precipitate and dislocation growth.

Original language	English
Article number	7887717
Pages (from-to)	735-740
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	7
Issue number	3
DOIs	https://doi.org/10.1109/JPHOTOV.2017.2678840
Publication status	Published - May 2017

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title = "Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon",

abstract = "The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates. Finally, we demonstrate the impact of nonequilibrium point defect concentrations on precipitate and dislocation growth.",

keywords = "Czochralski, Fourier transform infrared spectroscopy (FTIR), dislocations, minority carrier lifetime, oxygen precipitates, photoluminescence, self-interstitials, silicon, vacancy",

author = "Rougieux, {Fiacre E.} and Nguyen, {Hieu T.} and Macdonald, {D. H.} and Bernhard Mitchell and Robert Falster",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

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language = "English",

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T1 - Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

AU - Rougieux, Fiacre E.

AU - Nguyen, Hieu T.

AU - Macdonald, D. H.

AU - Mitchell, Bernhard

AU - Falster, Robert

PY - 2017/5

Y1 - 2017/5

N2 - The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates. Finally, we demonstrate the impact of nonequilibrium point defect concentrations on precipitate and dislocation growth.

AB - The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates. Finally, we demonstrate the impact of nonequilibrium point defect concentrations on precipitate and dislocation growth.

KW - Czochralski

KW - Fourier transform infrared spectroscopy (FTIR)

KW - dislocations

KW - minority carrier lifetime

KW - oxygen precipitates

KW - photoluminescence

KW - self-interstitials

KW - silicon

KW - vacancy

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SN - 2156-3381

VL - 7

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EP - 740

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 3

M1 - 7887717

ER -

Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

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