Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

Fiacre E. Rougieux, Hieu T. Nguyen, D. H. Macdonald, Bernhard Mitchell, Robert Falster

    Research output: Contribution to journalArticlepeer-review

    13 Citations (Scopus)


    The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates. Finally, we demonstrate the impact of nonequilibrium point defect concentrations on precipitate and dislocation growth.

    Original languageEnglish
    Article number7887717
    Pages (from-to)735-740
    Number of pages6
    JournalIEEE Journal of Photovoltaics
    Issue number3
    Publication statusPublished - May 2017


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