Growth of triangular shaped InGaAs/GaAs quantum wire structures

Seong Il Kim; Il Ki Han; Sang Wook Chung; C. Jagadish

doi:10.1023/A:1022976131428

Growth of triangular shaped InGaAs/GaAs quantum wire structures

Seong Il Kim, Il Ki Han^*, Sang Wook Chung, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The growth of traingular shaped InGaAs/GaAs quantum wire structures was studied by using metalorganic chemical vapor deposition (MOCVD) technique. The cleaved surface and top surface morphology of the grown structures were analyzed by using scanning electron microscopy (SEM). The results showed the dependence on the opening width of the height of the grown traingular shaped quantum wire structures.

Original language	English
Pages (from-to)	467-469
Number of pages	3
Journal	Journal of Materials Science Letters
Volume	22
Issue number	6
DOIs	https://doi.org/10.1023/A:1022976131428
Publication status	Published - 15 Mar 2003

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@article{aadaaaeb668a40e185091518437f3614,

title = "Growth of triangular shaped InGaAs/GaAs quantum wire structures",

abstract = "The growth of traingular shaped InGaAs/GaAs quantum wire structures was studied by using metalorganic chemical vapor deposition (MOCVD) technique. The cleaved surface and top surface morphology of the grown structures were analyzed by using scanning electron microscopy (SEM). The results showed the dependence on the opening width of the height of the grown traingular shaped quantum wire structures.",

author = "Kim, {Seong Il} and Han, {Il Ki} and Chung, {Sang Wook} and C. Jagadish",

year = "2003",

month = mar,

day = "15",

doi = "10.1023/A:1022976131428",

language = "English",

volume = "22",

pages = "467--469",

journal = "Journal of Materials Science Letters",

issn = "0261-8028",

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TY - JOUR

T1 - Growth of triangular shaped InGaAs/GaAs quantum wire structures

AU - Kim, Seong Il

AU - Han, Il Ki

AU - Chung, Sang Wook

AU - Jagadish, C.

PY - 2003/3/15

Y1 - 2003/3/15

N2 - The growth of traingular shaped InGaAs/GaAs quantum wire structures was studied by using metalorganic chemical vapor deposition (MOCVD) technique. The cleaved surface and top surface morphology of the grown structures were analyzed by using scanning electron microscopy (SEM). The results showed the dependence on the opening width of the height of the grown traingular shaped quantum wire structures.

AB - The growth of traingular shaped InGaAs/GaAs quantum wire structures was studied by using metalorganic chemical vapor deposition (MOCVD) technique. The cleaved surface and top surface morphology of the grown structures were analyzed by using scanning electron microscopy (SEM). The results showed the dependence on the opening width of the height of the grown traingular shaped quantum wire structures.

UR - http://www.scopus.com/inward/record.url?scp=0037445233&partnerID=8YFLogxK

U2 - 10.1023/A:1022976131428

DO - 10.1023/A:1022976131428

M3 - Article

SN - 0261-8028

VL - 22

SP - 467

EP - 469

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 6

ER -

Growth of triangular shaped InGaAs/GaAs quantum wire structures

Abstract

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