Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics

Hannah J. Joyce; Qiang Gao; Yong Kim; Hoe H. Tan; Chennupati Jagadish; Xin Zhang; Yanan Guo; Jin Zou; Melodie A. Fickenscher; Saranga Perera; Thang B. Hoang; Leigh M. Smith; Howard E. Jackson; M. Yarrison Rice Jan

doi:10.1109/NANO.2008.25

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics

Hannah J. Joyce, Qiang Gao, Yong Kim, Hoe H. Tan, Chennupati Jagadish, Xin Zhang, Yanan Guo, Jin Zou, Melodie A. Fickenscher, Saranga Perera, Thang B. Hoang, Leigh M. Smith, Howard E. Jackson, M. Yarrison Rice Jan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices.

Original language	English
Title of host publication	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages	59-62
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2008.25
Publication status	Published - 2008
Event	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States Duration: 18 Aug 2008 → 21 Aug 2008

Publication series

Name	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Conference

Conference	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Country/Territory	United States
City	Arlington, TX
Period	18/08/08 → 21/08/08

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10.1109/NANO.2008.25

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Joyce, H. J., Gao, Q., Kim, Y., Tan, H. H., Jagadish, C., Zhang, X., Guo, Y., Zou, J., Fickenscher, M. A., Perera, S., Hoang, T. B., Smith, L. M., Jackson, H. E., & Jan, M. Y. R. (2008). Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics. In 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO (pp. 59-62). Article 4617007 (2008 8th IEEE Conference on Nanotechnology, IEEE-NANO). https://doi.org/10.1109/NANO.2008.25

@inproceedings{9aeebd011eb04338a4d93bfd6e367b0c,

title = "Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics",

abstract = "We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices.",

keywords = "GaAs, MOCVD, Nanowire, Photoluminescence",

author = "Joyce, {Hannah J.} and Qiang Gao and Yong Kim and Tan, {Hoe H.} and Chennupati Jagadish and Xin Zhang and Yanan Guo and Jin Zou and Fickenscher, {Melodie A.} and Saranga Perera and Hoang, {Thang B.} and Smith, {Leigh M.} and Jackson, {Howard E.} and Jan, {M. Yarrison Rice}",

year = "2008",

doi = "10.1109/NANO.2008.25",

language = "English",

isbn = "9781424421046",

series = "2008 8th IEEE Conference on Nanotechnology, IEEE-NANO",

pages = "59--62",

booktitle = "2008 8th IEEE Conference on Nanotechnology, IEEE-NANO",

note = "2008 8th IEEE Conference on Nanotechnology, IEEE-NANO ; Conference date: 18-08-2008 Through 21-08-2008",

}

Joyce, HJ, Gao, Q, Kim, Y, Tan, HH , Jagadish, C, Zhang, X, Guo, Y, Zou, J, Fickenscher, MA, Perera, S, Hoang, TB, Smith, LM, Jackson, HE & Jan, MYR 2008, Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics. in 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO., 4617007, 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, pp. 59-62, 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, Arlington, TX, United States, 18/08/08. https://doi.org/10.1109/NANO.2008.25

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics. / Joyce, Hannah J.; Gao, Qiang; Kim, Yong et al.
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO. 2008. p. 59-62 4617007 (2008 8th IEEE Conference on Nanotechnology, IEEE-NANO).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics

AU - Joyce, Hannah J.

AU - Gao, Qiang

AU - Kim, Yong

AU - Tan, Hoe H.

AU - Jagadish, Chennupati

AU - Zhang, Xin

AU - Guo, Yanan

AU - Zou, Jin

AU - Fickenscher, Melodie A.

AU - Perera, Saranga

AU - Hoang, Thang B.

AU - Smith, Leigh M.

AU - Jackson, Howard E.

AU - Jan, M. Yarrison Rice

PY - 2008

Y1 - 2008

N2 - We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices.

AB - We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices.

KW - GaAs

KW - MOCVD

KW - Nanowire

KW - Photoluminescence

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U2 - 10.1109/NANO.2008.25

DO - 10.1109/NANO.2008.25

M3 - Conference contribution

SN - 9781424421046

T3 - 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

SP - 59

EP - 62

BT - 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

T2 - 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Y2 - 18 August 2008 through 21 August 2008

ER -

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics

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