Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

S. Paiman; Q. Gao; H. J. Joyce; Y. Kim; H. H. Tan; C. Jagadish; X. Zhang; Y. Guo; J. Zou

doi:10.1088/0022-3727/43/44/445402

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

S. Paiman^*, Q. Gao, H. J. Joyce, Y. Kim, H. H. Tan, C. Jagadish, X. Zhang, Y. Guo, J. Zou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study.

Original language	English
Article number	445402
Journal	Journal Physics D: Applied Physics
Volume	43
Issue number	44
DOIs	https://doi.org/10.1088/0022-3727/43/44/445402
Publication status	Published - 10 Nov 2010

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title = "Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires",

abstract = "The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study.",

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AU - Paiman, S.

AU - Gao, Q.

AU - Joyce, H. J.

AU - Kim, Y.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Zhang, X.

AU - Guo, Y.

AU - Zou, J.

PY - 2010/11/10

Y1 - 2010/11/10

N2 - The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study.

AB - The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study.

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DO - 10.1088/0022-3727/43/44/445402

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VL - 43

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

IS - 44

M1 - 445402

ER -

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

Abstract

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