Abstract
A new photoluminescence (PL) band in the energy range of 700 meV to 950 meV associated with hafnium implanted in silicon is reported. A shift in the position of photoluminescence peaks observed on the samples implanted with two different isotopes of Hf confirms the Hf-related origin of the observed photoluminescence band. Activation of the Hf-optical centers requires a 1000°C anneal step. The intensity of the PL lines depends on the cooling conditions. The spectrum consists of five peaks in the rapidly quenched sample as opposed to twenty one in the slowly cooled sample. Temperature dependent PL measurements and hydrostatic pressure measurements were performed to identify their nature.
Original language | English |
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Article number | V6.6 |
Pages (from-to) | 189-194 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 866 |
DOIs | |
Publication status | Published - 2005 |
Event | 2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: 29 Mar 2005 → 31 Mar 2005 |