Hafnium-related photoluminescence in single crystal silicon

R. Sachdeva*, A. A. Istratov, Wei Shan, P. N.K. Deenapanray, E. R. Weber

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    1 Citation (Scopus)

    Abstract

    A new photoluminescence (PL) band in the energy range of 700 meV to 950 meV associated with hafnium implanted in silicon is reported. A shift in the position of photoluminescence peaks observed on the samples implanted with two different isotopes of Hf confirms the Hf-related origin of the observed photoluminescence band. Activation of the Hf-optical centers requires a 1000°C anneal step. The intensity of the PL lines depends on the cooling conditions. The spectrum consists of five peaks in the rapidly quenched sample as opposed to twenty one in the slowly cooled sample. Temperature dependent PL measurements and hydrostatic pressure measurements were performed to identify their nature.

    Original languageEnglish
    Article numberV6.6
    Pages (from-to)189-194
    Number of pages6
    JournalMaterials Research Society Symposium - Proceedings
    Volume866
    DOIs
    Publication statusPublished - 2005
    Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
    Duration: 29 Mar 200531 Mar 2005

    Fingerprint

    Dive into the research topics of 'Hafnium-related photoluminescence in single crystal silicon'. Together they form a unique fingerprint.

    Cite this