Heavy-ion elastic-recoil detection analysis of doped-silica films for integrated photonics

T. D.M. Weijers; K. Gaff; H. Timmers; T. R. Ophel; R. G. Elliman

doi:10.1016/S0168-583X(99)00850-2

Heavy-ion elastic-recoil detection analysis of doped-silica films for integrated photonics

T. D.M. Weijers^*, K. Gaff, H. Timmers, T. R. Ophel, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Photosensitive Ge- and Sn-doped silica films are being developed for integrated photonics applications. Such films can be deposited by plasma assisted deposition techniques and their initial refractive index and photosensitivity are determined by the Ge(Sn):Si:O stoichiometry. The presence of H in the films is detrimental to their performance because it causes optical absorption in the 1.3-1.5 μm wavelength range of interest for telecommunications. Characterization of the films therefore requires accurate determination of the film composition, including the presence of H. Heavy-ion elastic-recoil detection (ERD) is shown to provide such information in a single measurement.

Original language	English
Pages (from-to)	624-628
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	161
DOIs	https://doi.org/10.1016/S0168-583X(99)00850-2
Publication status	Published - Mar 2000
Event	The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology - Dresden, Ger Duration: 26 Jul 1999 → 30 Jul 1999

Access to Document

10.1016/S0168-583X(99)00850-2

Cite this

@article{dee455b4950e4108a25439b42a4637cd,

title = "Heavy-ion elastic-recoil detection analysis of doped-silica films for integrated photonics",

abstract = "Photosensitive Ge- and Sn-doped silica films are being developed for integrated photonics applications. Such films can be deposited by plasma assisted deposition techniques and their initial refractive index and photosensitivity are determined by the Ge(Sn):Si:O stoichiometry. The presence of H in the films is detrimental to their performance because it causes optical absorption in the 1.3-1.5 μm wavelength range of interest for telecommunications. Characterization of the films therefore requires accurate determination of the film composition, including the presence of H. Heavy-ion elastic-recoil detection (ERD) is shown to provide such information in a single measurement.",

author = "Weijers, {T. D.M.} and K. Gaff and H. Timmers and Ophel, {T. R.} and Elliman, {R. G.}",

year = "2000",

month = mar,

doi = "10.1016/S0168-583X(99)00850-2",

language = "English",

volume = "161",

pages = "624--628",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

note = "The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology ; Conference date: 26-07-1999 Through 30-07-1999",

}

TY - JOUR

T1 - Heavy-ion elastic-recoil detection analysis of doped-silica films for integrated photonics

AU - Weijers, T. D.M.

AU - Gaff, K.

AU - Timmers, H.

AU - Ophel, T. R.

AU - Elliman, R. G.

PY - 2000/3

Y1 - 2000/3

N2 - Photosensitive Ge- and Sn-doped silica films are being developed for integrated photonics applications. Such films can be deposited by plasma assisted deposition techniques and their initial refractive index and photosensitivity are determined by the Ge(Sn):Si:O stoichiometry. The presence of H in the films is detrimental to their performance because it causes optical absorption in the 1.3-1.5 μm wavelength range of interest for telecommunications. Characterization of the films therefore requires accurate determination of the film composition, including the presence of H. Heavy-ion elastic-recoil detection (ERD) is shown to provide such information in a single measurement.

AB - Photosensitive Ge- and Sn-doped silica films are being developed for integrated photonics applications. Such films can be deposited by plasma assisted deposition techniques and their initial refractive index and photosensitivity are determined by the Ge(Sn):Si:O stoichiometry. The presence of H in the films is detrimental to their performance because it causes optical absorption in the 1.3-1.5 μm wavelength range of interest for telecommunications. Characterization of the films therefore requires accurate determination of the film composition, including the presence of H. Heavy-ion elastic-recoil detection (ERD) is shown to provide such information in a single measurement.

UR - http://www.scopus.com/inward/record.url?scp=0033892617&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)00850-2

DO - 10.1016/S0168-583X(99)00850-2

M3 - Conference article

SN - 0168-583X

VL - 161

SP - 624

EP - 628

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology

Y2 - 26 July 1999 through 30 July 1999

ER -

Heavy-ion elastic-recoil detection analysis of doped-silica films for integrated photonics

Abstract

Access to Document

Other files and links

Fingerprint

Cite this