Heavy ion elastic recoil detection analysis of silicon-rich silica films

T. D.M. Weijers; R. G. Elliman; H. Timmers

doi:10.1016/j.nimb.2004.01.142

Heavy ion elastic recoil detection analysis of silicon-rich silica films

T. D.M. Weijers^*, R. G. Elliman, H. Timmers

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

Heavy ion elastic recoil detection (ERD) is shown to be a powerful tool for studying the deposition and processing of Si-rich silica films deposited by plasma enhanced chemical vapour deposition (PECVD). Such films are of interest for the fabrication of SiO₂ layers containing silicon nanocrystals and are commonly deposited using SiH₄ and N₂O source gases. Heavy ion ERD reveals that as-deposited films can contain high concentrations of N, potentially reducing the efficacy of nanocrystal formation due to competing reactions between Si and N. This is believed to explain why high excess-Si concentrations are required to produce luminescent nanocrystals in such layers. Analysis of samples following high temperature (1200 °C) annealing also reveal the loss of H from the layers and highlight an experimental artefact associated with such high temperature processing.

Original language	English
Pages (from-to)	680-685
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	219-220
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2004.01.142
Publication status	Published - Jun 2004
Event	Proceedings of the Sixteenth International Conference on Ion - Albuquerque, NM., United States Duration: 29 Jun 2003 → 4 Jul 2003

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@article{d4e8ae06334f4be09a5dcc68a02f60b7,

title = "Heavy ion elastic recoil detection analysis of silicon-rich silica films",

abstract = "Heavy ion elastic recoil detection (ERD) is shown to be a powerful tool for studying the deposition and processing of Si-rich silica films deposited by plasma enhanced chemical vapour deposition (PECVD). Such films are of interest for the fabrication of SiO2 layers containing silicon nanocrystals and are commonly deposited using SiH4 and N2O source gases. Heavy ion ERD reveals that as-deposited films can contain high concentrations of N, potentially reducing the efficacy of nanocrystal formation due to competing reactions between Si and N. This is believed to explain why high excess-Si concentrations are required to produce luminescent nanocrystals in such layers. Analysis of samples following high temperature (1200 °C) annealing also reveal the loss of H from the layers and highlight an experimental artefact associated with such high temperature processing.",

keywords = "Elastic recoil detection, Ion beam analysis, Nanocrystals",

author = "Weijers, {T. D.M.} and Elliman, {R. G.} and H. Timmers",

year = "2004",

month = jun,

doi = "10.1016/j.nimb.2004.01.142",

language = "English",

volume = "219-220",

pages = "680--685",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

note = "Proceedings of the Sixteenth International Conference on Ion ; Conference date: 29-06-2003 Through 04-07-2003",

}

TY - JOUR

T1 - Heavy ion elastic recoil detection analysis of silicon-rich silica films

AU - Weijers, T. D.M.

AU - Elliman, R. G.

AU - Timmers, H.

PY - 2004/6

Y1 - 2004/6

N2 - Heavy ion elastic recoil detection (ERD) is shown to be a powerful tool for studying the deposition and processing of Si-rich silica films deposited by plasma enhanced chemical vapour deposition (PECVD). Such films are of interest for the fabrication of SiO2 layers containing silicon nanocrystals and are commonly deposited using SiH4 and N2O source gases. Heavy ion ERD reveals that as-deposited films can contain high concentrations of N, potentially reducing the efficacy of nanocrystal formation due to competing reactions between Si and N. This is believed to explain why high excess-Si concentrations are required to produce luminescent nanocrystals in such layers. Analysis of samples following high temperature (1200 °C) annealing also reveal the loss of H from the layers and highlight an experimental artefact associated with such high temperature processing.

AB - Heavy ion elastic recoil detection (ERD) is shown to be a powerful tool for studying the deposition and processing of Si-rich silica films deposited by plasma enhanced chemical vapour deposition (PECVD). Such films are of interest for the fabrication of SiO2 layers containing silicon nanocrystals and are commonly deposited using SiH4 and N2O source gases. Heavy ion ERD reveals that as-deposited films can contain high concentrations of N, potentially reducing the efficacy of nanocrystal formation due to competing reactions between Si and N. This is believed to explain why high excess-Si concentrations are required to produce luminescent nanocrystals in such layers. Analysis of samples following high temperature (1200 °C) annealing also reveal the loss of H from the layers and highlight an experimental artefact associated with such high temperature processing.

KW - Elastic recoil detection

KW - Ion beam analysis

KW - Nanocrystals

UR - http://www.scopus.com/inward/record.url?scp=2442566471&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2004.01.142

DO - 10.1016/j.nimb.2004.01.142

M3 - Conference article

SN - 0168-583X

VL - 219-220

SP - 680

EP - 685

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

T2 - Proceedings of the Sixteenth International Conference on Ion

Y2 - 29 June 2003 through 4 July 2003

ER -

Heavy ion elastic recoil detection analysis of silicon-rich silica films

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