Heavy ion induced intermixing at Ta/Si and Ta/SiO2 interfaces

W. Berky; A. G. Balogh; R. G. Elliman

doi:10.1016/j.nimb.2004.06.026

Heavy ion induced intermixing at Ta/Si and Ta/SiO₂ interfaces

W. Berky, A. G. Balogh^*, R. G. Elliman

^*Corresponding author for this work

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3 Citations (Scopus)

Abstract

Systematic ion beam mixing experiments have been performed on Ta/SiO ₂ and Ta/Si interfaces. Tantalum was evaporated on silicon and SiO₂/silicon substrates by means of molecular beam epithaxy. Samples were subsequently irradiated with 500 keV Si, 100 keV C and 100 keV O ions to different ionic fluences. The irradiated samples were studied by Rutherford backscattering spectrometry (RBS) to obtain the depth profiles and the interdiffusion parameters at the interfaces. Atomic force microscopy (AFM) was used to examine the surface roughness before and after irradiation. Ballistic mixing was found in both systems. Additional contributions to diffusion parameters were thermal spike effects (Ta/Si) and chemical reactions (Ta/SiO₂). Radiation enhanced diffusion was found to be the dominant process above room temperature in both systems.

Original language	English
Pages (from-to)	309-319
Number of pages	11
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	226
Issue number	3
DOIs	https://doi.org/10.1016/j.nimb.2004.06.026
Publication status	Published - Nov 2004

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title = "Heavy ion induced intermixing at Ta/Si and Ta/SiO2 interfaces",

abstract = "Systematic ion beam mixing experiments have been performed on Ta/SiO 2 and Ta/Si interfaces. Tantalum was evaporated on silicon and SiO2/silicon substrates by means of molecular beam epithaxy. Samples were subsequently irradiated with 500 keV Si, 100 keV C and 100 keV O ions to different ionic fluences. The irradiated samples were studied by Rutherford backscattering spectrometry (RBS) to obtain the depth profiles and the interdiffusion parameters at the interfaces. Atomic force microscopy (AFM) was used to examine the surface roughness before and after irradiation. Ballistic mixing was found in both systems. Additional contributions to diffusion parameters were thermal spike effects (Ta/Si) and chemical reactions (Ta/SiO2). Radiation enhanced diffusion was found to be the dominant process above room temperature in both systems.",

keywords = "Ion beam mixing, Radiation enhanced diffusion, Tantalum, Thermal spike",

author = "W. Berky and Balogh, \{A. G.\} and Elliman, \{R. G.\}",

year = "2004",

month = nov,

doi = "10.1016/j.nimb.2004.06.026",

language = "English",

volume = "226",

pages = "309--319",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Heavy ion induced intermixing at Ta/Si and Ta/SiO2 interfaces

AU - Berky, W.

AU - Balogh, A. G.

AU - Elliman, R. G.

PY - 2004/11

Y1 - 2004/11

N2 - Systematic ion beam mixing experiments have been performed on Ta/SiO 2 and Ta/Si interfaces. Tantalum was evaporated on silicon and SiO2/silicon substrates by means of molecular beam epithaxy. Samples were subsequently irradiated with 500 keV Si, 100 keV C and 100 keV O ions to different ionic fluences. The irradiated samples were studied by Rutherford backscattering spectrometry (RBS) to obtain the depth profiles and the interdiffusion parameters at the interfaces. Atomic force microscopy (AFM) was used to examine the surface roughness before and after irradiation. Ballistic mixing was found in both systems. Additional contributions to diffusion parameters were thermal spike effects (Ta/Si) and chemical reactions (Ta/SiO2). Radiation enhanced diffusion was found to be the dominant process above room temperature in both systems.

AB - Systematic ion beam mixing experiments have been performed on Ta/SiO 2 and Ta/Si interfaces. Tantalum was evaporated on silicon and SiO2/silicon substrates by means of molecular beam epithaxy. Samples were subsequently irradiated with 500 keV Si, 100 keV C and 100 keV O ions to different ionic fluences. The irradiated samples were studied by Rutherford backscattering spectrometry (RBS) to obtain the depth profiles and the interdiffusion parameters at the interfaces. Atomic force microscopy (AFM) was used to examine the surface roughness before and after irradiation. Ballistic mixing was found in both systems. Additional contributions to diffusion parameters were thermal spike effects (Ta/Si) and chemical reactions (Ta/SiO2). Radiation enhanced diffusion was found to be the dominant process above room temperature in both systems.

KW - Ion beam mixing

KW - Radiation enhanced diffusion

KW - Tantalum

KW - Thermal spike

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U2 - 10.1016/j.nimb.2004.06.026

DO - 10.1016/j.nimb.2004.06.026

M3 - Article

SN - 0168-583X

VL - 226

SP - 309

EP - 319

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 3

ER -

Heavy ion induced intermixing at Ta/Si and Ta/SiO₂ interfaces

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