Abstract
Hexagonal boron nitride (h-BN) has been proposed as a sorbent material for charge-induced switchable CO2 capture. However, h-BN is a wide-gap semiconductor, hindering injection of the requisite charge. Here, we employ first-principle calculations to support the proposal that in-plane h-BN/graphene (P-BN/G) heterostructures, consisting of alternating strips of h-BN and graphene, may provide an experimentally feasible material platform for voltage-induced charging of h-BN strips to realize switchable CO2 capture. Our results show that a significant amount of injected negative charges are distributed onto h-BN strips of P-BN/G, such that CO2 capture/release can be simply controlled by switching on/off the charge states of P-BN/G system. At saturation CO2 capture coverage, the negatively charged P-BN/G heterostructures achieve CO2 capture capacities up to 2.27 × 1014 cm−2, which is twice that which can be achieved on stacked h-BN/graphene (S-BN/G) nanosheets.
| Original language | English |
|---|---|
| Pages (from-to) | 139-144 |
| Number of pages | 6 |
| Journal | Chemical Physics |
| Volume | 478 |
| DOIs | |
| Publication status | Published - 20 Oct 2016 |
| Externally published | Yes |
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