@inproceedings{56618cb2b75b4466ac9f282b1ad825de,
title = "Hierarchal silica nanowire growth via single step annealing",
abstract = "Branched silica nanowires were grown on silicon substrates using a gold-catalyzed vapor-liquid-solid process in which the substrate was covered with a silicon capping layer. The reduced O2 partial pressure due to the capping layer is shown to result in regions of frustrated nanowire growth. By comparing electron micrographs from different regions, a growth mechanism for the branched nanowires is proposed.",
keywords = "Active oxidation, Nanowires, Pea-pod, Secondary growth, Silica (SiOx)",
author = "A. Shalav and Elliman, {R. G.}",
year = "2010",
doi = "10.1109/ICONN.2010.6045252",
language = "English",
isbn = "9781424452620",
series = "ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology",
pages = "203--206",
booktitle = "ICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology",
note = "2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN 2010 ; Conference date: 22-02-2010 Through 26-02-2010",
}