Hierarchal silica nanowire growth via single step annealing

A. Shalav*, R. G. Elliman

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Citations (Scopus)

    Abstract

    Branched silica nanowires were grown on silicon substrates using a gold-catalyzed vapor-liquid-solid process in which the substrate was covered with a silicon capping layer. The reduced O2 partial pressure due to the capping layer is shown to result in regions of frustrated nanowire growth. By comparing electron micrographs from different regions, a growth mechanism for the branched nanowires is proposed.

    Original languageEnglish
    Title of host publicationICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology
    Pages203-206
    Number of pages4
    DOIs
    Publication statusPublished - 2010
    Event2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN 2010 - Sydney, NSW, Australia
    Duration: 22 Feb 201026 Feb 2010

    Publication series

    NameICONN 2010 - Proceedings of the 2010 International Conference on Nanoscience and Nanotechnology

    Conference

    Conference2010 3rd International Conference on Nanoscience and Nanotechnology, ICONN 2010
    Country/TerritoryAustralia
    CitySydney, NSW
    Period22/02/1026/02/10

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