High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating

Guogang Zhang; Xu Guo; Fang Fang Ren; Yi Li; Bin Liu; Jiandong Ye; Haixiong Ge; Zili Xie; Rong Zhang; Hark Hoe Tan; Chennupati Jagadish

doi:10.1021/acsphotonics.6b00433

High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating

Guogang Zhang, Xu Guo, Fang Fang Ren^*, Yi Li, Bin Liu, Jiandong Ye, Haixiong Ge, Zili Xie, Rong Zhang, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

The potential of polarized light sources in liquid-crystal displays has been extensively pursued due to the large energy savings as compared to conventional light sources. Here, we demonstrate high-brightness polarized green light emission from an InGaN/GaN light-emitting diode (LED) structure by combining the strong coupling between surface plasmons (SPs) and multiple quantum wells and polarization effects of SPs. As compared to the as-grown LED structure, a significant enhancement is observed in the total light emission with a high polarization degree of 54%. This work might provide an efficient way to realize simple, compact, and high-efficiency polarized light emission devices for applications in electro-optical integration.

Original language	English
Pages (from-to)	1912-1918
Number of pages	7
Journal	ACS Photonics
Volume	3
Issue number	10
DOIs	https://doi.org/10.1021/acsphotonics.6b00433
Publication status	Published - 19 Oct 2016

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@article{aea8e53e590f4f879ac524e95f5733d5,

title = "High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating",

abstract = "The potential of polarized light sources in liquid-crystal displays has been extensively pursued due to the large energy savings as compared to conventional light sources. Here, we demonstrate high-brightness polarized green light emission from an InGaN/GaN light-emitting diode (LED) structure by combining the strong coupling between surface plasmons (SPs) and multiple quantum wells and polarization effects of SPs. As compared to the as-grown LED structure, a significant enhancement is observed in the total light emission with a high polarization degree of 54%. This work might provide an efficient way to realize simple, compact, and high-efficiency polarized light emission devices for applications in electro-optical integration.",

keywords = "InGaN/GaN, light-emitting diodes, polarized light, surface plasmons",

author = "Guogang Zhang and Xu Guo and Ren, {Fang Fang} and Yi Li and Bin Liu and Jiandong Ye and Haixiong Ge and Zili Xie and Rong Zhang and Tan, {Hark Hoe} and Chennupati Jagadish",

note = "Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = oct,

day = "19",

doi = "10.1021/acsphotonics.6b00433",

language = "English",

volume = "3",

pages = "1912--1918",

journal = "ACS Photonics",

issn = "2330-4022",

publisher = "American Chemical Society",

number = "10",

}

TY - JOUR

T1 - High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating

AU - Zhang, Guogang

AU - Guo, Xu

AU - Ren, Fang Fang

AU - Li, Yi

AU - Liu, Bin

AU - Ye, Jiandong

AU - Ge, Haixiong

AU - Xie, Zili

AU - Zhang, Rong

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2016/10/19

Y1 - 2016/10/19

N2 - The potential of polarized light sources in liquid-crystal displays has been extensively pursued due to the large energy savings as compared to conventional light sources. Here, we demonstrate high-brightness polarized green light emission from an InGaN/GaN light-emitting diode (LED) structure by combining the strong coupling between surface plasmons (SPs) and multiple quantum wells and polarization effects of SPs. As compared to the as-grown LED structure, a significant enhancement is observed in the total light emission with a high polarization degree of 54%. This work might provide an efficient way to realize simple, compact, and high-efficiency polarized light emission devices for applications in electro-optical integration.

AB - The potential of polarized light sources in liquid-crystal displays has been extensively pursued due to the large energy savings as compared to conventional light sources. Here, we demonstrate high-brightness polarized green light emission from an InGaN/GaN light-emitting diode (LED) structure by combining the strong coupling between surface plasmons (SPs) and multiple quantum wells and polarization effects of SPs. As compared to the as-grown LED structure, a significant enhancement is observed in the total light emission with a high polarization degree of 54%. This work might provide an efficient way to realize simple, compact, and high-efficiency polarized light emission devices for applications in electro-optical integration.

KW - InGaN/GaN

KW - light-emitting diodes

KW - polarized light

KW - surface plasmons

UR - http://www.scopus.com/inward/record.url?scp=84992187877&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.6b00433

DO - 10.1021/acsphotonics.6b00433

M3 - Article

SN - 2330-4022

VL - 3

SP - 1912

EP - 1918

JO - ACS Photonics

JF - ACS Photonics

IS - 10

ER -

High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating

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