HIGH EFFICIENCY ( greater than 18%, ACTIVE AREA, AM1) SILICON minMIS SOLAR CELLS.

M. A. Green; R. B. Godfrey; M. R. Willison; A. W. Blakers

HIGH EFFICIENCY ( greater than 18%, ACTIVE AREA, AM1) SILICON minMIS SOLAR CELLS.

M. A. Green^*, R. B. Godfrey, M. R. Willison, A. W. Blakers

^*Corresponding author for this work

School of Engineering

Research output: Contribution to journal › Conference article › peer-review

37 Citations (Scopus)

Abstract

MinMIS (minoroty carrier Metal-Insulator-Semiconductor) solar cells are electronically equivalent to ideal p-n junction cells. However, grating minMIS cells with the semiconductor surface between the grating lines inverted have a performance advantage over actual p-n junction cells. Such grating cells on polished silicon substrates have displayed active area efficiencies up to 18. 3% (AM1, 28 degree C). The outstanding feature of these devices is the high open circuit voltages which can be obtained. Since the voltage limiting mechanism of conventional p-n junction devices is eliminated, values as high as 660 mV have been measured (AMO, 25 degree C).

Original language	English
Pages (from-to)	684-687
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Publication status	Published - 1980
Event	Conf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA Duration: 7 Jan 1980 → 10 Jan 1980

Cite this

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title = "HIGH EFFICIENCY ( greater than 18%, ACTIVE AREA, AM1) SILICON minMIS SOLAR CELLS.",

abstract = "MinMIS (minoroty carrier Metal-Insulator-Semiconductor) solar cells are electronically equivalent to ideal p-n junction cells. However, grating minMIS cells with the semiconductor surface between the grating lines inverted have a performance advantage over actual p-n junction cells. Such grating cells on polished silicon substrates have displayed active area efficiencies up to 18. 3% (AM1, 28 degree C). The outstanding feature of these devices is the high open circuit voltages which can be obtained. Since the voltage limiting mechanism of conventional p-n junction devices is eliminated, values as high as 660 mV have been measured (AMO, 25 degree C).",

author = "Green, {M. A.} and Godfrey, {R. B.} and Willison, {M. R.} and Blakers, {A. W.}",

year = "1980",

language = "English",

pages = "684--687",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Conf Rec IEEE Photovoltaic Spec Conf 14th ; Conference date: 07-01-1980 Through 10-01-1980",

}

TY - JOUR

T1 - HIGH EFFICIENCY ( greater than 18%, ACTIVE AREA, AM1) SILICON minMIS SOLAR CELLS.

AU - Green, M. A.

AU - Godfrey, R. B.

AU - Willison, M. R.

AU - Blakers, A. W.

PY - 1980

Y1 - 1980

N2 - MinMIS (minoroty carrier Metal-Insulator-Semiconductor) solar cells are electronically equivalent to ideal p-n junction cells. However, grating minMIS cells with the semiconductor surface between the grating lines inverted have a performance advantage over actual p-n junction cells. Such grating cells on polished silicon substrates have displayed active area efficiencies up to 18. 3% (AM1, 28 degree C). The outstanding feature of these devices is the high open circuit voltages which can be obtained. Since the voltage limiting mechanism of conventional p-n junction devices is eliminated, values as high as 660 mV have been measured (AMO, 25 degree C).

AB - MinMIS (minoroty carrier Metal-Insulator-Semiconductor) solar cells are electronically equivalent to ideal p-n junction cells. However, grating minMIS cells with the semiconductor surface between the grating lines inverted have a performance advantage over actual p-n junction cells. Such grating cells on polished silicon substrates have displayed active area efficiencies up to 18. 3% (AM1, 28 degree C). The outstanding feature of these devices is the high open circuit voltages which can be obtained. Since the voltage limiting mechanism of conventional p-n junction devices is eliminated, values as high as 660 mV have been measured (AMO, 25 degree C).

UR - http://www.scopus.com/inward/record.url?scp=0018921619&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0018921619

SN - 0160-8371

SP - 684

EP - 687

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Conf Rec IEEE Photovoltaic Spec Conf 14th

Y2 - 7 January 1980 through 10 January 1980

ER -

HIGH EFFICIENCY ( greater than 18%, ACTIVE AREA, AM1) SILICON minMIS SOLAR CELLS.

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