High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector

Yi Zhu; Ziyuan Li; Linglong Zhang; Bowen Wang; Zhenqing Luo; Jianzheng Long; Jiong Yang; Lan Fu; Yuerui Lu

doi:10.1021/acsami.8b14076

High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector

Yi Zhu, Ziyuan Li, Linglong Zhang, Bowen Wang, Zhenqing Luo, Jianzheng Long, Jiong Yang, Lan Fu^*, Yuerui Lu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

Developing a high-efficiency and low-cost light source with emission wavelength transparent to silicon is an essential step toward silicon-based nanophotonic devices and micro/nano industry platforms. Here, a near-infrared monolayer MoTe ₂ light-emitting diode (LED) has been demonstrated and its emission wavelength is transparent to silicon. By taking advantage of the quantum tunneling effect, the device has achieved a very high external quantum efficiency (EQE) of 9.5% at 83 K, which is the highest EQE obtained from LED devices fabricated from monolayer TMDs so far. When the device is operated as a photodetector, the MoTe ₂ device exhibits a strong photoresponsivity at resonant wavelength 1145 nm. The low dark current of ∼5pA and fast response time 5.06 ms are achieved due to suppression of hBN tunneling layer. Our results open a new route for the investigation of novel near-infrared silicon integrated optoelectronic devices.

Original language	English
Pages (from-to)	43291-43298
Number of pages	8
Journal	ACS applied materials & interfaces
Volume	10
Issue number	50
DOIs	https://doi.org/10.1021/acsami.8b14076
Publication status	Published - 19 Dec 2018

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title = "High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector",

abstract = " Developing a high-efficiency and low-cost light source with emission wavelength transparent to silicon is an essential step toward silicon-based nanophotonic devices and micro/nano industry platforms. Here, a near-infrared monolayer MoTe 2 light-emitting diode (LED) has been demonstrated and its emission wavelength is transparent to silicon. By taking advantage of the quantum tunneling effect, the device has achieved a very high external quantum efficiency (EQE) of 9.5% at 83 K, which is the highest EQE obtained from LED devices fabricated from monolayer TMDs so far. When the device is operated as a photodetector, the MoTe 2 device exhibits a strong photoresponsivity at resonant wavelength 1145 nm. The low dark current of ∼5pA and fast response time 5.06 ms are achieved due to suppression of hBN tunneling layer. Our results open a new route for the investigation of novel near-infrared silicon integrated optoelectronic devices.",

keywords = "light emitting diode, molybdenum ditelluride, near-infrared, quantum efficiency, tunneling effect",

author = "Yi Zhu and Ziyuan Li and Linglong Zhang and Bowen Wang and Zhenqing Luo and Jianzheng Long and Jiong Yang and Lan Fu and Yuerui Lu",

note = "Publisher Copyright: Copyright {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = dec,

day = "19",

doi = "10.1021/acsami.8b14076",

language = "English",

volume = "10",

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journal = "ACS applied materials & interfaces",

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T1 - High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector

AU - Zhu, Yi

AU - Li, Ziyuan

AU - Zhang, Linglong

AU - Wang, Bowen

AU - Luo, Zhenqing

AU - Long, Jianzheng

AU - Yang, Jiong

AU - Fu, Lan

AU - Lu, Yuerui

PY - 2018/12/19

Y1 - 2018/12/19

N2 - Developing a high-efficiency and low-cost light source with emission wavelength transparent to silicon is an essential step toward silicon-based nanophotonic devices and micro/nano industry platforms. Here, a near-infrared monolayer MoTe 2 light-emitting diode (LED) has been demonstrated and its emission wavelength is transparent to silicon. By taking advantage of the quantum tunneling effect, the device has achieved a very high external quantum efficiency (EQE) of 9.5% at 83 K, which is the highest EQE obtained from LED devices fabricated from monolayer TMDs so far. When the device is operated as a photodetector, the MoTe 2 device exhibits a strong photoresponsivity at resonant wavelength 1145 nm. The low dark current of ∼5pA and fast response time 5.06 ms are achieved due to suppression of hBN tunneling layer. Our results open a new route for the investigation of novel near-infrared silicon integrated optoelectronic devices.

AB - Developing a high-efficiency and low-cost light source with emission wavelength transparent to silicon is an essential step toward silicon-based nanophotonic devices and micro/nano industry platforms. Here, a near-infrared monolayer MoTe 2 light-emitting diode (LED) has been demonstrated and its emission wavelength is transparent to silicon. By taking advantage of the quantum tunneling effect, the device has achieved a very high external quantum efficiency (EQE) of 9.5% at 83 K, which is the highest EQE obtained from LED devices fabricated from monolayer TMDs so far. When the device is operated as a photodetector, the MoTe 2 device exhibits a strong photoresponsivity at resonant wavelength 1145 nm. The low dark current of ∼5pA and fast response time 5.06 ms are achieved due to suppression of hBN tunneling layer. Our results open a new route for the investigation of novel near-infrared silicon integrated optoelectronic devices.

KW - light emitting diode

KW - molybdenum ditelluride

KW - near-infrared

KW - quantum efficiency

KW - tunneling effect

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U2 - 10.1021/acsami.8b14076

DO - 10.1021/acsami.8b14076

M3 - Article

SN - 1944-8244

VL - 10

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EP - 43298

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 50

ER -

High-Efficiency Monolayer Molybdenum Ditelluride Light-Emitting Diode and Photodetector

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