High efficiency UMG silicon solar cells: Impact of compensation on cell parameters

Fiacre Rougieux*, Christian Samundsett, Kean Chern Fong, Andreas Fell, Peiting Zheng, Daniel MacDonald, Julien Degoulange, Roland Einhaus, Maxime Forster

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    20 Citations (Scopus)

    Abstract

    Hih efficiency solar cells have been fabricated with wafers from an n-type Czochralski grown (Cz) ingot using 100% Upgraded Metallurgical-Grade (UMG) silicon feedstock. The UMG cells fabricated with a passivated emitter and rear totally diffused (PERT) structure have an independently confirmed cell efficiency of 19.8%. This is the highest efficiency reported for a cell based on 100% UMG silicon at the time of publication. The current and power losses are analysed as a function of measured material parameters, including carrier mobility, lifetime and the presence of the boron-oxygen defect. Dopant compensation is shown to reduce both the minority carrier lifetime and mobility, which significantly affects both the current and voltage of the device.

    Original languageEnglish
    Pages (from-to)725-734
    Number of pages10
    JournalProgress in Photovoltaics: Research and Applications
    Volume24
    Issue number5
    DOIs
    Publication statusPublished - 1 May 2016

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