High efficiency UMG silicon solar cells: Impact of compensation on cell parameters

Fiacre Rougieux; Christian Samundsett; Kean Chern Fong; Andreas Fell; Peiting Zheng; Daniel MacDonald; Julien Degoulange; Roland Einhaus; Maxime Forster

doi:10.1002/pip.2729

High efficiency UMG silicon solar cells: Impact of compensation on cell parameters

Fiacre Rougieux^*, Christian Samundsett, Kean Chern Fong, Andreas Fell, Peiting Zheng, Daniel MacDonald, Julien Degoulange, Roland Einhaus, Maxime Forster

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Hih efficiency solar cells have been fabricated with wafers from an n-type Czochralski grown (Cz) ingot using 100% Upgraded Metallurgical-Grade (UMG) silicon feedstock. The UMG cells fabricated with a passivated emitter and rear totally diffused (PERT) structure have an independently confirmed cell efficiency of 19.8%. This is the highest efficiency reported for a cell based on 100% UMG silicon at the time of publication. The current and power losses are analysed as a function of measured material parameters, including carrier mobility, lifetime and the presence of the boron-oxygen defect. Dopant compensation is shown to reduce both the minority carrier lifetime and mobility, which significantly affects both the current and voltage of the device.

Original language	English
Pages (from-to)	725-734
Number of pages	10
Journal	Progress in Photovoltaics: Research and Applications
Volume	24
Issue number	5
DOIs	https://doi.org/10.1002/pip.2729
Publication status	Published - 1 May 2016

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title = "High efficiency UMG silicon solar cells: Impact of compensation on cell parameters",

abstract = "Hih efficiency solar cells have been fabricated with wafers from an n-type Czochralski grown (Cz) ingot using 100\% Upgraded Metallurgical-Grade (UMG) silicon feedstock. The UMG cells fabricated with a passivated emitter and rear totally diffused (PERT) structure have an independently confirmed cell efficiency of 19.8\%. This is the highest efficiency reported for a cell based on 100\% UMG silicon at the time of publication. The current and power losses are analysed as a function of measured material parameters, including carrier mobility, lifetime and the presence of the boron-oxygen defect. Dopant compensation is shown to reduce both the minority carrier lifetime and mobility, which significantly affects both the current and voltage of the device.",

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T1 - High efficiency UMG silicon solar cells

T2 - Impact of compensation on cell parameters

AU - Rougieux, Fiacre

AU - Samundsett, Christian

AU - Fong, Kean Chern

AU - Fell, Andreas

AU - Zheng, Peiting

AU - MacDonald, Daniel

AU - Degoulange, Julien

AU - Einhaus, Roland

AU - Forster, Maxime

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N2 - Hih efficiency solar cells have been fabricated with wafers from an n-type Czochralski grown (Cz) ingot using 100% Upgraded Metallurgical-Grade (UMG) silicon feedstock. The UMG cells fabricated with a passivated emitter and rear totally diffused (PERT) structure have an independently confirmed cell efficiency of 19.8%. This is the highest efficiency reported for a cell based on 100% UMG silicon at the time of publication. The current and power losses are analysed as a function of measured material parameters, including carrier mobility, lifetime and the presence of the boron-oxygen defect. Dopant compensation is shown to reduce both the minority carrier lifetime and mobility, which significantly affects both the current and voltage of the device.

AB - Hih efficiency solar cells have been fabricated with wafers from an n-type Czochralski grown (Cz) ingot using 100% Upgraded Metallurgical-Grade (UMG) silicon feedstock. The UMG cells fabricated with a passivated emitter and rear totally diffused (PERT) structure have an independently confirmed cell efficiency of 19.8%. This is the highest efficiency reported for a cell based on 100% UMG silicon at the time of publication. The current and power losses are analysed as a function of measured material parameters, including carrier mobility, lifetime and the presence of the boron-oxygen defect. Dopant compensation is shown to reduce both the minority carrier lifetime and mobility, which significantly affects both the current and voltage of the device.

KW - boron-oxygen

KW - compensation

KW - mobility

KW - silicon

KW - solar cell

KW - upgraded metallurgical grade

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U2 - 10.1002/pip.2729

DO - 10.1002/pip.2729

M3 - Article

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EP - 734

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 5

ER -

High efficiency UMG silicon solar cells: Impact of compensation on cell parameters

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