High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures

Shuai Li, Xinjun Liu, Sanjoy Kumar Nandi, Dinesh Kumar Venkatachalam, Robert Glen Elliman

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    47 Citations (Scopus)

    Abstract

    Electrical self-oscillation is reported for a Ti/NbOx negative differential resistance device incorporated in a simple electric circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V, and demonstrate frequency control in the range from 2.5 to 20.5 MHz for voltage changes as small as ∼1 V. Device operation is reported for >6.5 × 1010 cycles, during which the operating frequency and peak-to-peak device current decreased by ∼25%. The low operating voltage, large frequency range, and high endurance of these devices makes them particularly interesting for applications such as neuromorphic computing.

    Original languageEnglish
    Article number212902
    JournalApplied Physics Letters
    Volume106
    Issue number21
    DOIs
    Publication statusPublished - 25 May 2015

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