High-energy ion implantation for electrical isolation of InP-based materials and devices

M. C. Ridgway; R. G. Elliman; M. E. Faith; P. C. Kemeny; M. Davies

doi:10.1016/0168-583X(94)00510-9

High-energy ion implantation for electrical isolation of InP-based materials and devices

M. C. Ridgway^*, R. G. Elliman, M. E. Faith, P. C. Kemeny, M. Davies

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP.

Original language	English
Pages (from-to)	323-326
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	96
Issue number	1-2
DOIs	https://doi.org/10.1016/0168-583X(94)00510-9
Publication status	Published - 1 Mar 1995

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title = "High-energy ion implantation for electrical isolation of InP-based materials and devices",

abstract = "The application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP.",

author = "Ridgway, {M. C.} and Elliman, {R. G.} and Faith, {M. E.} and Kemeny, {P. C.} and M. Davies",

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doi = "10.1016/0168-583X(94)00510-9",

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T1 - High-energy ion implantation for electrical isolation of InP-based materials and devices

AU - Ridgway, M. C.

AU - Elliman, R. G.

AU - Faith, M. E.

AU - Kemeny, P. C.

AU - Davies, M.

PY - 1995/3/1

Y1 - 1995/3/1

N2 - The application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP.

AB - The application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP.

UR - http://www.scopus.com/inward/record.url?scp=0001513895&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(94)00510-9

DO - 10.1016/0168-583X(94)00510-9

M3 - Article

AN - SCOPUS:0001513895

SN - 0168-583X

VL - 96

SP - 323

EP - 326

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

High-energy ion implantation for electrical isolation of InP-based materials and devices

Abstract

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