High gain erbium doped tellurium oxide waveguide amplifier

K. Vu*, S. Madden

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Tellurium oxide, the main component of tellurite glasses, offers a number of advantages as emission hosts for Erbium doped waveguide amplifiers (EDWAs) over other materials because of its high refractive index (larger emission cross section and more compact devices), large emission bandwidth, low ion to ion cross relaxation, relative independence of the 1550nm Erbium lifetime on concentration, and high Erbium solubility as has been demonstrated in tellurite glass and fiber amplifiers [1-4]. Whilst there has until now been no demonstration of tellurite based EDWAs with high gain [5], it is clear that tellurite based devices have the potential to deliver higher ultimate gain per unit length and bandwidth than previous demonstrations in other materials [4].

    Original languageEnglish
    Title of host publication2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
    DOIs
    Publication statusPublished - 2011
    Event2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany
    Duration: 22 May 201126 May 2011

    Publication series

    Name2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

    Conference

    Conference2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
    Country/TerritoryGermany
    CityMunich
    Period22/05/1126/05/11

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