High gain single GaAs nanowire photodetector

Hao Wang

doi:10.1063/1.4816246

High gain single GaAs nanowire photodetector

Hao Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

75 Citations (Scopus)

Abstract

An undoped single GaAs nanowire (NW) photodetector based on a metal-semiconductor-metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence of leaky-mode resonance.

Original language	English
Article number	093101
Journal	Applied Physics Letters
Volume	103
Issue number	9
DOIs	https://doi.org/10.1063/1.4816246
Publication status	Published - 26 Aug 2013

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title = "High gain single GaAs nanowire photodetector",

abstract = "An undoped single GaAs nanowire (NW) photodetector based on a metal-semiconductor-metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence of leaky-mode resonance.",

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year = "2013",

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N2 - An undoped single GaAs nanowire (NW) photodetector based on a metal-semiconductor-metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence of leaky-mode resonance.

AB - An undoped single GaAs nanowire (NW) photodetector based on a metal-semiconductor-metal Schottky diode structure is fabricated by a focused ion beam method. The photoconductive gain of the device reaches 20 000 at low laser excitation. Bias-dependence of gain proves that the surface contributes more to the gain at higher bias because of an increased surface charge region. The spectral response demonstrates not only the band-edge absorption profile of the single GaAs NW, but also the existence of leaky-mode resonance.

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U2 - 10.1063/1.4816246

DO - 10.1063/1.4816246

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

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High gain single GaAs nanowire photodetector

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