Abstract
The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.
Original language | English |
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Pages (from-to) | 561-565 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 27 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 |