High index contrast polysiloxane waveguides fabricated by dry etching

S. J. Madden, M. Y. Zhang, D. Y. Choi, B. Luther-Davies, R. Charters

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    1 Citation (Scopus)

    Abstract

    The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

    Original languageEnglish
    Pages (from-to)561-565
    Number of pages5
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume27
    Issue number3
    DOIs
    Publication statusPublished - 2009

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