High index contrast polysiloxane waveguides fabricated by dry etching

S. J. Madden; M. Y. Zhang; D. Y. Choi; B. Luther-Davies; R. Charters

doi:10.1116/1.3119670

High index contrast polysiloxane waveguides fabricated by dry etching

S. J. Madden, M. Y. Zhang, D. Y. Choi, B. Luther-Davies, R. Charters

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

Original language	English
Pages (from-to)	561-565
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	27
Issue number	3
DOIs	https://doi.org/10.1116/1.3119670
Publication status	Published - 2009

Access to Document

10.1116/1.3119670

Cite this

@article{0e17650655204608a90b4126152c4c1d,

title = "High index contrast polysiloxane waveguides fabricated by dry etching",

abstract = "The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.",

author = "Madden, \{S. J.\} and Zhang, \{M. Y.\} and Choi, \{D. Y.\} and B. Luther-Davies and R. Charters",

year = "2009",

doi = "10.1116/1.3119670",

language = "English",

volume = "27",

pages = "561--565",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - High index contrast polysiloxane waveguides fabricated by dry etching

AU - Madden, S. J.

AU - Zhang, M. Y.

AU - Choi, D. Y.

AU - Luther-Davies, B.

AU - Charters, R.

PY - 2009

Y1 - 2009

N2 - The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

AB - The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

UR - https://www.scopus.com/pages/publications/65549099315

U2 - 10.1116/1.3119670

DO - 10.1116/1.3119670

M3 - Article

SN - 0734-2101

VL - 27

SP - 561

EP - 565

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

High index contrast polysiloxane waveguides fabricated by dry etching

Abstract

Access to Document

Other files and links

Fingerprint

Cite this