High index contrast polysiloxane waveguides fabricated by dry etching

S. J. Madden; M. Y. Zhang; D. Y. Choi; B. Luther-Davies; R. Charters

doi:10.1116/1.3119670

High index contrast polysiloxane waveguides fabricated by dry etching

S. J. Madden, M. Y. Zhang, D. Y. Choi, B. Luther-Davies, R. Charters

Research output: Contribution to journal › Article › peer-review

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Abstract

The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

Original language	English
Pages (from-to)	561-565
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	27
Issue number	3
DOIs	https://doi.org/10.1116/1.3119670
Publication status	Published - 2009

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title = "High index contrast polysiloxane waveguides fabricated by dry etching",

abstract = "The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.",

author = "Madden, {S. J.} and Zhang, {M. Y.} and Choi, {D. Y.} and B. Luther-Davies and R. Charters",

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AU - Zhang, M. Y.

AU - Choi, D. Y.

AU - Luther-Davies, B.

AU - Charters, R.

PY - 2009

Y1 - 2009

N2 - The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

AB - The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPG polysiloxane thin films. The use of a silica mask and CH F3 O2 etch gas led to large etch selectivity between the silica and IPG of >20 and etch rates of >100 nmmin. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films.

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M3 - Article

SN - 0734-2101

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

High index contrast polysiloxane waveguides fabricated by dry etching

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