High minority carrier lifetime in phosphorus-gettered multicrystalline silicon

Andrés Cuevas; Matthew Stocks; Stephane Armand; Michael Stuckings; Andrew Blakers; Francesca Ferrazza

doi:10.1063/1.118469

High minority carrier lifetime in phosphorus-gettered multicrystalline silicon

Andrés Cuevas^*, Matthew Stocks, Stephane Armand, Michael Stuckings, Andrew Blakers, Francesca Ferrazza

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

The electronic quality of multicrystalline material produced by directional solidification has been evaluated by means of photoconductance techniques. Very high minority carrier lifetimes, in the vicinity of 200 μs, have been measured in p-type 1.5 Ω cm material that had received a phosphorus diffusion gettering treatment. The measurements correspond to an effective lifetime averaged over an area of 3 cm² that includes several grain boundaries and reflects the combined bulk, grain boundary and surface recombination mechanisms. The high lifetime (15 μs) also obtained in low resistivity 0.2 Ω cm wafers has allowed the fabrication of solar cells with an open-circuit voltage of 657 mV (AM1.5 G, 100 mW/cm², 25 °C), probably the highest ever reported for multicrystalline silicon.

Original language	English
Pages (from-to)	1017-1019
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	8
DOIs	https://doi.org/10.1063/1.118469
Publication status	Published - 24 Feb 1997

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AU - Cuevas, Andrés

AU - Stocks, Matthew

AU - Armand, Stephane

AU - Stuckings, Michael

AU - Blakers, Andrew

AU - Ferrazza, Francesca

PY - 1997/2/24

Y1 - 1997/2/24

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AB - The electronic quality of multicrystalline material produced by directional solidification has been evaluated by means of photoconductance techniques. Very high minority carrier lifetimes, in the vicinity of 200 μs, have been measured in p-type 1.5 Ω cm material that had received a phosphorus diffusion gettering treatment. The measurements correspond to an effective lifetime averaged over an area of 3 cm2 that includes several grain boundaries and reflects the combined bulk, grain boundary and surface recombination mechanisms. The high lifetime (15 μs) also obtained in low resistivity 0.2 Ω cm wafers has allowed the fabrication of solar cells with an open-circuit voltage of 657 mV (AM1.5 G, 100 mW/cm2, 25 °C), probably the highest ever reported for multicrystalline silicon.

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High minority carrier lifetime in phosphorus-gettered multicrystalline silicon

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