High-mobility p-type semiconducting two-dimensional β-TeO2

Ali Zavabeti; Patjaree Aukarasereenont; Hayden Tuohey; Nitu Syed; Azmira Jannat; Aaron Elbourne; Kibret A. Messalea; Bao Yue Zhang; Billy J. Murdoch; James G. Partridge; Matthias Wurdack; Daniel L. Creedon; Joel van Embden; Kourosh Kalantar-Zadeh; Salvy P. Russo; Chris F. McConville; Torben Daeneke

doi:10.1038/s41928-021-00561-5

High-mobility p-type semiconducting two-dimensional β-TeO₂

Ali Zavabeti^*, Patjaree Aukarasereenont, Hayden Tuohey, Nitu Syed, Azmira Jannat, Aaron Elbourne, Kibret A. Messalea, Bao Yue Zhang, Billy J. Murdoch, James G. Partridge, Matthias Wurdack, Daniel L. Creedon, Joel van Embden, Kourosh Kalantar-Zadeh, Salvy P. Russo, Chris F. McConville^*, Torben Daeneke^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

129 Citations (Scopus)

Abstract

Wide-bandgap oxide semiconductors are essential for the development of high-speed and energy-efficient transparent electronics. However, while many high-mobility n-type oxide semiconductors are known, wide-bandgap p-type oxides have carrier mobilities that are one to two orders of magnitude lower due to strong carrier localization near their valence band edge. Here, we report the growth of bilayer beta tellurium dioxide (β-TeO₂), which has recently been proposed theoretically as a high-mobility p-type semiconductor, through the surface oxidation of a eutectic mixture of tellurium and selenium. The isolated β-TeO₂ nanosheets are transparent and have a direct bandgap of 3.7 eV. Field-effect transistors based on the nanosheets exhibit p-type switching with an on/off ratio exceeding 10⁶ and a field-effect hole mobility of up to 232 cm² V⁻¹ s⁻¹ at room temperature. A low effective mass of 0.51 was observed for holes, and the carrier mobility reached 6,000 cm² V⁻¹ s⁻¹ on cooling to −50 °C.

Original language	English
Pages (from-to)	277-283
Number of pages	7
Journal	Nature Electronics
Volume	4
Issue number	4
DOIs	https://doi.org/10.1038/s41928-021-00561-5
Publication status	Published - Apr 2021

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Zavabeti, A., Aukarasereenont, P., Tuohey, H., Syed, N., Jannat, A., Elbourne, A., Messalea, K. A., Zhang, B. Y., Murdoch, B. J., Partridge, J. G., Wurdack, M., Creedon, D. L., van Embden, J., Kalantar-Zadeh, K., Russo, S. P., McConville, C. F., & Daeneke, T. (2021). High-mobility p-type semiconducting two-dimensional β-TeO₂. Nature Electronics, 4(4), 277-283. https://doi.org/10.1038/s41928-021-00561-5

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title = "High-mobility p-type semiconducting two-dimensional β-TeO2",

abstract = "Wide-bandgap oxide semiconductors are essential for the development of high-speed and energy-efficient transparent electronics. However, while many high-mobility n-type oxide semiconductors are known, wide-bandgap p-type oxides have carrier mobilities that are one to two orders of magnitude lower due to strong carrier localization near their valence band edge. Here, we report the growth of bilayer beta tellurium dioxide (β-TeO2), which has recently been proposed theoretically as a high-mobility p-type semiconductor, through the surface oxidation of a eutectic mixture of tellurium and selenium. The isolated β-TeO2 nanosheets are transparent and have a direct bandgap of 3.7 eV. Field-effect transistors based on the nanosheets exhibit p-type switching with an on/off ratio exceeding 106 and a field-effect hole mobility of up to 232 cm2 V−1 s−1 at room temperature. A low effective mass of 0.51 was observed for holes, and the carrier mobility reached 6,000 cm2 V−1 s−1 on cooling to −50 °C.",

author = "Ali Zavabeti and Patjaree Aukarasereenont and Hayden Tuohey and Nitu Syed and Azmira Jannat and Aaron Elbourne and Messalea, {Kibret A.} and Zhang, {Bao Yue} and Murdoch, {Billy J.} and Partridge, {James G.} and Matthias Wurdack and Creedon, {Daniel L.} and {van Embden}, Joel and Kourosh Kalantar-Zadeh and Russo, {Salvy P.} and McConville, {Chris F.} and Torben Daeneke",

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year = "2021",

month = apr,

doi = "10.1038/s41928-021-00561-5",

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Zavabeti, A, Aukarasereenont, P, Tuohey, H, Syed, N, Jannat, A, Elbourne, A, Messalea, KA, Zhang, BY, Murdoch, BJ, Partridge, JG, Wurdack, M, Creedon, DL, van Embden, J, Kalantar-Zadeh, K, Russo, SP, McConville, CF & Daeneke, T 2021, 'High-mobility p-type semiconducting two-dimensional β-TeO₂', Nature Electronics, vol. 4, no. 4, pp. 277-283. https://doi.org/10.1038/s41928-021-00561-5

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AU - Aukarasereenont, Patjaree

AU - Tuohey, Hayden

AU - Syed, Nitu

AU - Jannat, Azmira

AU - Elbourne, Aaron

AU - Messalea, Kibret A.

AU - Zhang, Bao Yue

AU - Murdoch, Billy J.

AU - Partridge, James G.

AU - Wurdack, Matthias

AU - Creedon, Daniel L.

AU - van Embden, Joel

AU - Kalantar-Zadeh, Kourosh

AU - Russo, Salvy P.

AU - McConville, Chris F.

AU - Daeneke, Torben

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N2 - Wide-bandgap oxide semiconductors are essential for the development of high-speed and energy-efficient transparent electronics. However, while many high-mobility n-type oxide semiconductors are known, wide-bandgap p-type oxides have carrier mobilities that are one to two orders of magnitude lower due to strong carrier localization near their valence band edge. Here, we report the growth of bilayer beta tellurium dioxide (β-TeO2), which has recently been proposed theoretically as a high-mobility p-type semiconductor, through the surface oxidation of a eutectic mixture of tellurium and selenium. The isolated β-TeO2 nanosheets are transparent and have a direct bandgap of 3.7 eV. Field-effect transistors based on the nanosheets exhibit p-type switching with an on/off ratio exceeding 106 and a field-effect hole mobility of up to 232 cm2 V−1 s−1 at room temperature. A low effective mass of 0.51 was observed for holes, and the carrier mobility reached 6,000 cm2 V−1 s−1 on cooling to −50 °C.

AB - Wide-bandgap oxide semiconductors are essential for the development of high-speed and energy-efficient transparent electronics. However, while many high-mobility n-type oxide semiconductors are known, wide-bandgap p-type oxides have carrier mobilities that are one to two orders of magnitude lower due to strong carrier localization near their valence band edge. Here, we report the growth of bilayer beta tellurium dioxide (β-TeO2), which has recently been proposed theoretically as a high-mobility p-type semiconductor, through the surface oxidation of a eutectic mixture of tellurium and selenium. The isolated β-TeO2 nanosheets are transparent and have a direct bandgap of 3.7 eV. Field-effect transistors based on the nanosheets exhibit p-type switching with an on/off ratio exceeding 106 and a field-effect hole mobility of up to 232 cm2 V−1 s−1 at room temperature. A low effective mass of 0.51 was observed for holes, and the carrier mobility reached 6,000 cm2 V−1 s−1 on cooling to −50 °C.

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DO - 10.1038/s41928-021-00561-5

M3 - Article

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VL - 4

SP - 277

EP - 283

JO - Nature Electronics

JF - Nature Electronics

IS - 4

ER -

High-mobility p-type semiconducting two-dimensional β-TeO₂

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