High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD

III-V semiconductor nanowires hold outstanding potential as key component for future photonic and electronic devices, among which GaAs/AlGaAs heterostructure nanowires wires show particular promise. However, due to the large surface-to-volume ratio, the carrier lifetime and mobility of GaAs nanowires are extremely sensitive to the surface/interface states. Although nearly intrinsic exciton lifetimes have been achieved of GaAs/AlGaAs core-shell nanowires at low temperature,¹ the carrier lifetimes at room temperature is still far from state-of-art. In this study, the effects of AlGaAs growth parameters on the optical properties of GaAs core nanowires have been investigated and nanosecond minority carrier lifetimes were achieved at room temperature.² Furthermore, GaAs/AlGaAs core-multishell nanowires with GaAs quantum well tube (QWT) emitting at room temperature have been demonstrated.