TY - JOUR
T1 - High performance silicon solar cells using low dose phosphorus implants
AU - Blakers, Andrew W.
AU - Green, Martin A.
AU - Willison, Michael R.
PY - 1981/12/31
Y1 - 1981/12/31
N2 - A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 1013/cm2 have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.
AB - A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 1013/cm2 have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.
UR - http://www.scopus.com/inward/record.url?scp=49049149103&partnerID=8YFLogxK
U2 - 10.1016/0029-554X(81)90981-2
DO - 10.1016/0029-554X(81)90981-2
M3 - Article
AN - SCOPUS:49049149103
SN - 0029-554X
VL - 191
SP - 51
EP - 53
JO - Nuclear Instruments and Methods
JF - Nuclear Instruments and Methods
IS - 1-3
ER -