High performance silicon solar cells using low dose phosphorus implants

Andrew W. Blakers*, Martin A. Green, Michael R. Willison

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 1013/cm2 have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.

Original languageEnglish
Pages (from-to)51-53
Number of pages3
JournalNuclear Instruments and Methods
Volume191
Issue number1-3
DOIs
Publication statusPublished - 31 Dec 1981
Externally publishedYes

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