High performance silicon solar cells using low dose phosphorus implants

Andrew W. Blakers; Martin A. Green; Michael R. Willison

doi:10.1016/0029-554X(81)90981-2

High performance silicon solar cells using low dose phosphorus implants

Andrew W. Blakers^*, Martin A. Green, Michael R. Willison

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 10¹³/cm² have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.

Original language	English
Pages (from-to)	51-53
Number of pages	3
Journal	Nuclear Instruments and Methods
Volume	191
Issue number	1-3
DOIs	https://doi.org/10.1016/0029-554X(81)90981-2
Publication status	Published - 31 Dec 1981
Externally published	Yes

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title = "High performance silicon solar cells using low dose phosphorus implants",

abstract = "A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 1013/cm2 have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.",

author = "Blakers, \{Andrew W.\} and Green, \{Martin A.\} and Willison, \{Michael R.\}",

year = "1981",

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doi = "10.1016/0029-554X(81)90981-2",

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T1 - High performance silicon solar cells using low dose phosphorus implants

AU - Blakers, Andrew W.

AU - Green, Martin A.

AU - Willison, Michael R.

PY - 1981/12/31

Y1 - 1981/12/31

N2 - A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 1013/cm2 have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.

AB - A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 1013/cm2 have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.

UR - https://www.scopus.com/pages/publications/49049149103

U2 - 10.1016/0029-554X(81)90981-2

DO - 10.1016/0029-554X(81)90981-2

M3 - Article

AN - SCOPUS:49049149103

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VL - 191

SP - 51

EP - 53

JO - Nuclear Instruments and Methods

JF - Nuclear Instruments and Methods

IS - 1-3

ER -

High performance silicon solar cells using low dose phosphorus implants

Abstract

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