High power CW output from low confinement asymmetric structure diode laser

G. Iordache; M. Buda; G. A. Acket; T. G. van de Roer; L. M.F. Kaufmann; F. Karouta; C. Jagadish; H. H. Tan

High power CW output from low confinement asymmetric structure diode laser

G. Iordache^*, M. Buda, G. A. Acket, T. G. van de Roer, L. M.F. Kaufmann, F. Karouta, C. Jagadish, H. H. Tan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

High power continuous wave output from diode using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 μm wide stripe 1-3 mm long diode lasers were studied. 1.8 W of continuous wave optical power per uncoated facet was obtained at an injection current of 4.7 A (36 mW/μm). The threshold current density is 270-400 A/cm².

Original language	English
Pages (from-to)	148-149
Number of pages	2
Journal	Electronics Letters
Volume	35
Issue number	2
Publication status	Published - 1 Jan 1999

Cite this

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title = "High power CW output from low confinement asymmetric structure diode laser",

abstract = "High power continuous wave output from diode using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 μm wide stripe 1-3 mm long diode lasers were studied. 1.8 W of continuous wave optical power per uncoated facet was obtained at an injection current of 4.7 A (36 mW/μm). The threshold current density is 270-400 A/cm2.",

author = "G. Iordache and M. Buda and Acket, {G. A.} and {van de Roer}, {T. G.} and Kaufmann, {L. M.F.} and F. Karouta and C. Jagadish and Tan, {H. H.}",

year = "1999",

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day = "1",

language = "English",

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pages = "148--149",

journal = "Electronics Letters",

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T1 - High power CW output from low confinement asymmetric structure diode laser

AU - Iordache, G.

AU - Buda, M.

AU - Acket, G. A.

AU - van de Roer, T. G.

AU - Kaufmann, L. M.F.

AU - Karouta, F.

AU - Jagadish, C.

AU - Tan, H. H.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - High power continuous wave output from diode using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 μm wide stripe 1-3 mm long diode lasers were studied. 1.8 W of continuous wave optical power per uncoated facet was obtained at an injection current of 4.7 A (36 mW/μm). The threshold current density is 270-400 A/cm2.

AB - High power continuous wave output from diode using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 μm wide stripe 1-3 mm long diode lasers were studied. 1.8 W of continuous wave optical power per uncoated facet was obtained at an injection current of 4.7 A (36 mW/μm). The threshold current density is 270-400 A/cm2.

UR - http://www.scopus.com/inward/record.url?scp=0032662502&partnerID=8YFLogxK

M3 - Article

SN - 0013-5194

VL - 35

SP - 148

EP - 149

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

High power CW output from low confinement asymmetric structure diode laser

Abstract

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