High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

S. Mokkapati; Nian Jiang; D. Saxena; H. H. Tan; C. Jagadish

doi:10.1109/SUM.2014.14

High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

S. Mokkapati^*, Nian Jiang, D. Saxena, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.

Original language	English
Title of host publication	Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	13-14
Number of pages	2
ISBN (Electronic)	9781479927678
DOIs	https://doi.org/10.1109/SUM.2014.14
Publication status	Published - 18 Sept 2014
Event	2014 Summer Topicals Meeting Series, SUM 2014 - Montreal, Canada Duration: 14 Jul 2014 → 16 Jul 2014

Publication series

Name	Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014

Conference

Conference	2014 Summer Topicals Meeting Series, SUM 2014
Country/Territory	Canada
City	Montreal
Period	14/07/14 → 16/07/14

Access to Document

10.1109/SUM.2014.14

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Mokkapati, S., Jiang, N., Saxena, D., Tan, H. H., & Jagadish, C. (2014). High quantum efficiency (Al) GaAs nanowires for optoelectronic devices. In Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014 (pp. 13-14). Article 6902962 (Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SUM.2014.14

@inproceedings{b0e2788836394d4b8f681418296209c0,

title = "High quantum efficiency (Al) GaAs nanowires for optoelectronic devices",

abstract = "III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.",

keywords = "III-V semiconductor, nanowire, optoelectronic devices, plasmonics",

author = "S. Mokkapati and Nian Jiang and D. Saxena and Tan, {H. H.} and C. Jagadish",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Summer Topicals Meeting Series, SUM 2014 ; Conference date: 14-07-2014 Through 16-07-2014",

year = "2014",

month = sep,

day = "18",

doi = "10.1109/SUM.2014.14",

language = "English",

series = "Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "13--14",

booktitle = "Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014",

address = "United States",

}

Mokkapati, S, Jiang, N, Saxena, D, Tan, HH & Jagadish, C 2014, High quantum efficiency (Al) GaAs nanowires for optoelectronic devices. in Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014., 6902962, Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014, Institute of Electrical and Electronics Engineers Inc., pp. 13-14, 2014 Summer Topicals Meeting Series, SUM 2014, Montreal, Canada, 14/07/14. https://doi.org/10.1109/SUM.2014.14

High quantum efficiency (Al) GaAs nanowires for optoelectronic devices. / Mokkapati, S.; Jiang, Nian; Saxena, D. et al.
Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 13-14 6902962 (Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

AU - Mokkapati, S.

AU - Jiang, Nian

AU - Saxena, D.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2014/9/18

Y1 - 2014/9/18

N2 - III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.

AB - III-V semiconductor nanowires are promising for optoelectronic device applications. Applications of GaAs nanowires however have been limited due to low quantum/radiative efficiency. We discuss two approaches to increase the quantum efficiency of (Al) GaAs nanowires.

KW - III-V semiconductor

KW - nanowire

KW - optoelectronic devices

KW - plasmonics

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U2 - 10.1109/SUM.2014.14

DO - 10.1109/SUM.2014.14

M3 - Conference contribution

T3 - Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014

SP - 13

EP - 14

BT - Proceedings - 2014 Summer Topicals Meeting Series, SUM 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Summer Topicals Meeting Series, SUM 2014

Y2 - 14 July 2014 through 16 July 2014

ER -

High quantum efficiency (Al) GaAs nanowires for optoelectronic devices

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