High rate etching of 4H-SiC using a SF6/O2 helicon plasma

P. Chabert; N. Proust; J. Perrin; R. W. Boswell

doi:10.1063/1.126329

High rate etching of 4H-SiC using a SF₆/O₂ helicon plasma

P. Chabert^*, N. Proust, J. Perrin, R. W. Boswell

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The etch rate of 4H-SiC in a SF₆ helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of 1.35 μm/min along with good uniformity on 2 in. SiC substrates was achieved when this distance was minimum. Smooth etched surfaces free of micromasking have been obtained when using a nickel mask and the selectivity SiC/Ni was found to be about 50 under high etch rate conditions. Via holes have been etched to a depth of 330 μm in 4H-SiC substrates.

Original language	English
Pages (from-to)	2310-2312
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	16
DOIs	https://doi.org/10.1063/1.126329
Publication status	Published - 17 Apr 2000

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title = "High rate etching of 4H-SiC using a SF6/O2 helicon plasma",

abstract = "The etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of 1.35 μm/min along with good uniformity on 2 in. SiC substrates was achieved when this distance was minimum. Smooth etched surfaces free of micromasking have been obtained when using a nickel mask and the selectivity SiC/Ni was found to be about 50 under high etch rate conditions. Via holes have been etched to a depth of 330 μm in 4H-SiC substrates.",

author = "P. Chabert and N. Proust and J. Perrin and Boswell, {R. W.}",

year = "2000",

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AU - Chabert, P.

AU - Proust, N.

AU - Perrin, J.

AU - Boswell, R. W.

PY - 2000/4/17

Y1 - 2000/4/17

N2 - The etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of 1.35 μm/min along with good uniformity on 2 in. SiC substrates was achieved when this distance was minimum. Smooth etched surfaces free of micromasking have been obtained when using a nickel mask and the selectivity SiC/Ni was found to be about 50 under high etch rate conditions. Via holes have been etched to a depth of 330 μm in 4H-SiC substrates.

AB - The etch rate of 4H-SiC in a SF6 helicon plasma has been investigated as a function of pressure, power injected in the source, substrate bias voltage, and distance between the substrate holder and the helicon source. The highest etch rate yet reported of 1.35 μm/min along with good uniformity on 2 in. SiC substrates was achieved when this distance was minimum. Smooth etched surfaces free of micromasking have been obtained when using a nickel mask and the selectivity SiC/Ni was found to be about 50 under high etch rate conditions. Via holes have been etched to a depth of 330 μm in 4H-SiC substrates.

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U2 - 10.1063/1.126329

DO - 10.1063/1.126329

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SP - 2310

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

High rate etching of 4H-SiC using a SF₆/O₂ helicon plasma

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