High resolution imaging of the interfacial region in metal-insulator- semiconductor and Schottky diodes

Martin A. Green; Andrew W. Blakers; Ondrej L. Krivanek

doi:10.1063/1.332289

High resolution imaging of the interfacial region in metal-insulator- semiconductor and Schottky diodes

Martin A. Green^*, Andrew W. Blakers, Ondrej L. Krivanek

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Interfacial oxides can greatly influence the properties of metal-semiconductor heterojunctions as demonstrated by recent work on metal-insulator-semiconductor solar cells. The physical structure of such interfacial regions is examined using High Resolution Electron Microscopy. Simultaneous imaging of the lattice structure on both sides of the interfacial region is reported for the first time.

Original language	English
Pages (from-to)	2885-2887
Number of pages	3
Journal	Journal of Applied Physics
Volume	54
Issue number	5
DOIs	https://doi.org/10.1063/1.332289
Publication status	Published - 1983
Externally published	Yes

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10.1063/1.332289

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@article{bfdf6cab336147c093e3621ded60b7ab,

title = "High resolution imaging of the interfacial region in metal-insulator- semiconductor and Schottky diodes",

abstract = "Interfacial oxides can greatly influence the properties of metal-semiconductor heterojunctions as demonstrated by recent work on metal-insulator-semiconductor solar cells. The physical structure of such interfacial regions is examined using High Resolution Electron Microscopy. Simultaneous imaging of the lattice structure on both sides of the interfacial region is reported for the first time.",

author = "Green, {Martin A.} and Blakers, {Andrew W.} and Krivanek, {Ondrej L.}",

year = "1983",

doi = "10.1063/1.332289",

language = "English",

volume = "54",

pages = "2885--2887",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

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TY - JOUR

T1 - High resolution imaging of the interfacial region in metal-insulator- semiconductor and Schottky diodes

AU - Green, Martin A.

AU - Blakers, Andrew W.

AU - Krivanek, Ondrej L.

PY - 1983

Y1 - 1983

N2 - Interfacial oxides can greatly influence the properties of metal-semiconductor heterojunctions as demonstrated by recent work on metal-insulator-semiconductor solar cells. The physical structure of such interfacial regions is examined using High Resolution Electron Microscopy. Simultaneous imaging of the lattice structure on both sides of the interfacial region is reported for the first time.

AB - Interfacial oxides can greatly influence the properties of metal-semiconductor heterojunctions as demonstrated by recent work on metal-insulator-semiconductor solar cells. The physical structure of such interfacial regions is examined using High Resolution Electron Microscopy. Simultaneous imaging of the lattice structure on both sides of the interfacial region is reported for the first time.

UR - http://www.scopus.com/inward/record.url?scp=0020748388&partnerID=8YFLogxK

U2 - 10.1063/1.332289

DO - 10.1063/1.332289

M3 - Article

AN - SCOPUS:0020748388

SN - 0021-8979

VL - 54

SP - 2885

EP - 2887

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

High resolution imaging of the interfacial region in metal-insulator- semiconductor and Schottky diodes

Abstract

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