High temperature rapid thermal annealing of phosphorous ion implanted InAsInP quantum dots

S. Barik; H. H. Tan; C. Jagadish

doi:10.1063/1.2710006

High temperature rapid thermal annealing of phosphorous ion implanted InAsInP quantum dots

S. Barik^*, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The effect of high temperature annealing of the InAsInP quantum dots (QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy (450 keV) phosphorous ion implantation at room temperature with doses of 5× 1011 -5× 1013 ions cm2 with subsequent high temperature (750-850 °C) rapid thermal annealing is also studied. A large implantation-induced energy shift of up to 309 meV (400 nm) is observed. The implanted samples annealed at 850 °C show reduced PL linewidth and enhanced integrated PL intensity compared to the implanted samples annealed at 750 °C.

Original language	English
Article number	093106
Journal	Applied Physics Letters
Volume	90
Issue number	9
DOIs	https://doi.org/10.1063/1.2710006
Publication status	Published - 2007

Access to Document

10.1063/1.2710006

Cite this

@article{c99c9ccc8bed4db79ba770f19371e89a,

title = "High temperature rapid thermal annealing of phosphorous ion implanted InAsInP quantum dots",

abstract = "The effect of high temperature annealing of the InAsInP quantum dots (QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy (450 keV) phosphorous ion implantation at room temperature with doses of 5× 1011 -5× 1013 ions cm2 with subsequent high temperature (750-850 °C) rapid thermal annealing is also studied. A large implantation-induced energy shift of up to 309 meV (400 nm) is observed. The implanted samples annealed at 850 °C show reduced PL linewidth and enhanced integrated PL intensity compared to the implanted samples annealed at 750 °C.",

author = "S. Barik and Tan, \{H. H.\} and C. Jagadish",

year = "2007",

doi = "10.1063/1.2710006",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - High temperature rapid thermal annealing of phosphorous ion implanted InAsInP quantum dots

AU - Barik, S.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2007

Y1 - 2007

N2 - The effect of high temperature annealing of the InAsInP quantum dots (QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy (450 keV) phosphorous ion implantation at room temperature with doses of 5× 1011 -5× 1013 ions cm2 with subsequent high temperature (750-850 °C) rapid thermal annealing is also studied. A large implantation-induced energy shift of up to 309 meV (400 nm) is observed. The implanted samples annealed at 850 °C show reduced PL linewidth and enhanced integrated PL intensity compared to the implanted samples annealed at 750 °C.

AB - The effect of high temperature annealing of the InAsInP quantum dots (QDs) containing a thin GaAs interlayer is investigated. The QDs are rapid thermally annealed at 750, 800, 850, and 900 °C for 30 s. The QDs with the GaAs interlayer show good thermal stability up to 850 °C as well as enhanced integrated photoluminescence (PL) intensity and reduced PL linewidth. The effect of high energy (450 keV) phosphorous ion implantation at room temperature with doses of 5× 1011 -5× 1013 ions cm2 with subsequent high temperature (750-850 °C) rapid thermal annealing is also studied. A large implantation-induced energy shift of up to 309 meV (400 nm) is observed. The implanted samples annealed at 850 °C show reduced PL linewidth and enhanced integrated PL intensity compared to the implanted samples annealed at 750 °C.

UR - https://www.scopus.com/pages/publications/33847624257

U2 - 10.1063/1.2710006

DO - 10.1063/1.2710006

M3 - Article

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 093106

ER -

High temperature rapid thermal annealing of phosphorous ion implanted InAsInP quantum dots

Abstract

Access to Document

Other files and links

Fingerprint

Cite this