High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN: Fe template

Yunfeng Chen; Hai Lu; Dunjun Chen; Fangfang Ren; Rong Zhang; Youdou Zheng

doi:10.1002/pssc.201510210

High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN: Fe template

Yunfeng Chen, Hai Lu^*, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this work, high-voltage photoconductive semiconductor switches (PCSSs) with inter-digitated contact electrodes are directly fabricated on semi-insultating HVPE GaN:Fe template. The PCSS exhibits a cutoff wavelength of 365 nm and a dark resistivity of ∼10¹⁰ Ω cm. A maximum blocking voltage of more than 1100 V is obtained, corresponding to a breakdown electric field higher than 1.57 MV/cm for the GaN:Fe template. When excited by a 266 nm ultraviolet pulsed laser, the PCSS under 550 V bias could produce a peak photocurrent density of 387 A/cm² within a rise time of ∼20 ns. The fall time of the photocurrent pulse is mainly RC time limited.

Original language	English
Pages (from-to)	374-377
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	13
Issue number	5-6
DOIs	https://doi.org/10.1002/pssc.201510210
Publication status	Published - 1 May 2016
Externally published	Yes

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title = "High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN: Fe template",

abstract = "In this work, high-voltage photoconductive semiconductor switches (PCSSs) with inter-digitated contact electrodes are directly fabricated on semi-insultating HVPE GaN:Fe template. The PCSS exhibits a cutoff wavelength of 365 nm and a dark resistivity of ∼1010 Ω cm. A maximum blocking voltage of more than 1100 V is obtained, corresponding to a breakdown electric field higher than 1.57 MV/cm for the GaN:Fe template. When excited by a 266 nm ultraviolet pulsed laser, the PCSS under 550 V bias could produce a peak photocurrent density of 387 A/cm2 within a rise time of ∼20 ns. The fall time of the photocurrent pulse is mainly RC time limited.",

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T1 - High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN

T2 - Fe template

AU - Chen, Yunfeng

AU - Lu, Hai

AU - Chen, Dunjun

AU - Ren, Fangfang

AU - Zhang, Rong

AU - Zheng, Youdou

PY - 2016/5/1

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N2 - In this work, high-voltage photoconductive semiconductor switches (PCSSs) with inter-digitated contact electrodes are directly fabricated on semi-insultating HVPE GaN:Fe template. The PCSS exhibits a cutoff wavelength of 365 nm and a dark resistivity of ∼1010 Ω cm. A maximum blocking voltage of more than 1100 V is obtained, corresponding to a breakdown electric field higher than 1.57 MV/cm for the GaN:Fe template. When excited by a 266 nm ultraviolet pulsed laser, the PCSS under 550 V bias could produce a peak photocurrent density of 387 A/cm2 within a rise time of ∼20 ns. The fall time of the photocurrent pulse is mainly RC time limited.

AB - In this work, high-voltage photoconductive semiconductor switches (PCSSs) with inter-digitated contact electrodes are directly fabricated on semi-insultating HVPE GaN:Fe template. The PCSS exhibits a cutoff wavelength of 365 nm and a dark resistivity of ∼1010 Ω cm. A maximum blocking voltage of more than 1100 V is obtained, corresponding to a breakdown electric field higher than 1.57 MV/cm for the GaN:Fe template. When excited by a 266 nm ultraviolet pulsed laser, the PCSS under 550 V bias could produce a peak photocurrent density of 387 A/cm2 within a rise time of ∼20 ns. The fall time of the photocurrent pulse is mainly RC time limited.

KW - GaN

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KW - PCSS

KW - Pulse power applications

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JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

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ER -

High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN: Fe template

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