Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes

Inseok Yang; Sejeong Kim; Marika Niihori; Ahmed Alabadla; Ziyuan Li; Li Li; Mark N. Lockrey; Duk Yong Choi; Igor Aharonovich; Jennifer Wong-Leung; Hark Hoe Tan; Chennupati Jagadish; Lan Fu

doi:10.1016/j.nanoen.2020.104576

Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes

Inseok Yang, Sejeong Kim, Marika Niihori, Ahmed Alabadla, Ziyuan Li, Li Li, Mark N. Lockrey, Duk Yong Choi, Igor Aharonovich, Jennifer Wong-Leung, Hark Hoe Tan, Chennupati Jagadish, Lan Fu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the development of Si-based integrated photonics. In this paper, we report the growth of highly uniform triangular prism InGaAs/InP single quantum well (QW) nanowires using a 2-step growth by metal organic chemical vapour deposition by selective area epitaxy technique. Based on these nanowire arrays, we demonstrate nanowire array LEDs with strong electroluminescence at two main peaks, originating from the axial and radial QW respectively and control the relative emission of those two peaks. We further reveal that a long lateral contact of the nanowire LED results in more intense radial QW emission by shortening the current path to the radial quantum well. Our study provides an important foundation for the development of high-performance array nanowire-based devices such as high-power multi-wavelength LEDs, high power electrically switchable wavelength-selectors and QW infrared photodetectors.

Original language	English
Article number	104576
Journal	Nano Energy
Volume	71
DOIs	https://doi.org/10.1016/j.nanoen.2020.104576
Publication status	Published - May 2020

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10.1016/j.nanoen.2020.104576

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@article{27abf03ae83246e3b38fc01a6e2a0603,

title = "Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes",

abstract = "III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the development of Si-based integrated photonics. In this paper, we report the growth of highly uniform triangular prism InGaAs/InP single quantum well (QW) nanowires using a 2-step growth by metal organic chemical vapour deposition by selective area epitaxy technique. Based on these nanowire arrays, we demonstrate nanowire array LEDs with strong electroluminescence at two main peaks, originating from the axial and radial QW respectively and control the relative emission of those two peaks. We further reveal that a long lateral contact of the nanowire LED results in more intense radial QW emission by shortening the current path to the radial quantum well. Our study provides an important foundation for the development of high-performance array nanowire-based devices such as high-power multi-wavelength LEDs, high power electrically switchable wavelength-selectors and QW infrared photodetectors.",

keywords = "InGaAs/InP quantum wells, MOCVD, Nanowire array LEDs, Nanowires, Selective area epitaxy",

author = "Inseok Yang and Sejeong Kim and Marika Niihori and Ahmed Alabadla and Ziyuan Li and Li Li and Lockrey, {Mark N.} and Choi, {Duk Yong} and Igor Aharonovich and Jennifer Wong-Leung and Tan, {Hark Hoe} and Chennupati Jagadish and Lan Fu",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

year = "2020",

month = may,

doi = "10.1016/j.nanoen.2020.104576",

language = "English",

volume = "71",

journal = "Nano Energy",

issn = "2211-2855",

publisher = "Elsevier B.V.",

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T1 - Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes

AU - Yang, Inseok

AU - Kim, Sejeong

AU - Niihori, Marika

AU - Alabadla, Ahmed

AU - Li, Ziyuan

AU - Li, Li

AU - Lockrey, Mark N.

AU - Choi, Duk Yong

AU - Aharonovich, Igor

AU - Wong-Leung, Jennifer

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

AU - Fu, Lan

PY - 2020/5

Y1 - 2020/5

N2 - III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the development of Si-based integrated photonics. In this paper, we report the growth of highly uniform triangular prism InGaAs/InP single quantum well (QW) nanowires using a 2-step growth by metal organic chemical vapour deposition by selective area epitaxy technique. Based on these nanowire arrays, we demonstrate nanowire array LEDs with strong electroluminescence at two main peaks, originating from the axial and radial QW respectively and control the relative emission of those two peaks. We further reveal that a long lateral contact of the nanowire LED results in more intense radial QW emission by shortening the current path to the radial quantum well. Our study provides an important foundation for the development of high-performance array nanowire-based devices such as high-power multi-wavelength LEDs, high power electrically switchable wavelength-selectors and QW infrared photodetectors.

AB - III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the development of Si-based integrated photonics. In this paper, we report the growth of highly uniform triangular prism InGaAs/InP single quantum well (QW) nanowires using a 2-step growth by metal organic chemical vapour deposition by selective area epitaxy technique. Based on these nanowire arrays, we demonstrate nanowire array LEDs with strong electroluminescence at two main peaks, originating from the axial and radial QW respectively and control the relative emission of those two peaks. We further reveal that a long lateral contact of the nanowire LED results in more intense radial QW emission by shortening the current path to the radial quantum well. Our study provides an important foundation for the development of high-performance array nanowire-based devices such as high-power multi-wavelength LEDs, high power electrically switchable wavelength-selectors and QW infrared photodetectors.

KW - InGaAs/InP quantum wells

KW - MOCVD

KW - Nanowire array LEDs

KW - Nanowires

KW - Selective area epitaxy

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U2 - 10.1016/j.nanoen.2020.104576

DO - 10.1016/j.nanoen.2020.104576

M3 - Article

SN - 2211-2855

VL - 71

JO - Nano Energy

JF - Nano Energy

M1 - 104576

ER -

Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes

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