HOLE COLLECTING CONTACTS BY Pt WITH PtSi FORMATION (poster)

Dirk Koenig; Gunter Ebest

HOLE COLLECTING CONTACTS BY Pt WITH PtSi FORMATION (poster)

^*Corresponding author for this work

Research output: Contribution to conference › Poster

Abstract

By applying an external negative drift field source for the creation of a p-conduction layer doping can be spared apart from the hole collection contact where p+ doping has to be done. If a metallic layer of sufficiently high electron work function is used a p + contact can be formed as well. Platinum (Pt) is a perfect candidate for such a contact. Unfortunately its performance is limited by the current crowding effect occuring at the edges as the space charge of a Schottky contact is rather small. However, with an area of high electron work function and conductivity underneath the Pt contact the diffusion current flows perpendicular into that region. Platinum Silicide (PtxSi) is a material which fulfills these requirements. It is synthesized by depositing Pt onto a Silicon (Si) substrate and subsequent anneal. In this paper we present experimental results and discuss advantages and drawbacks of such a contact design.
Keywords: Contact - 1: Sputtering - 2: Interfaces -- 3

Original language	English
Pages	1503-1506
Number of pages	4
Publication status	Published - 6 Oct 2001
Externally published	Yes
Event	European Photovoltaic Solar Energy Conference 2001 - Munich, Germany Duration: 22 Oct 2001 → 26 Oct 2001

Conference

Conference	European Photovoltaic Solar Energy Conference 2001
Country/Territory	Germany
City	Munich
Period	22/10/01 → 26/10/01

Cite this

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title = "HOLE COLLECTING CONTACTS BY Pt WITH PtSi FORMATION (poster)",

abstract = "By applying an external negative drift field source for the creation of a p-conduction layer doping can be spared apart from the hole collection contact where p+ doping has to be done. If a metallic layer of sufficiently high electron work function is used a p + contact can be formed as well. Platinum (Pt) is a perfect candidate for such a contact. Unfortunately its performance is limited by the current crowding effect occuring at the edges as the space charge of a Schottky contact is rather small. However, with an area of high electron work function and conductivity underneath the Pt contact the diffusion current flows perpendicular into that region. Platinum Silicide (PtxSi) is a material which fulfills these requirements. It is synthesized by depositing Pt onto a Silicon (Si) substrate and subsequent anneal. In this paper we present experimental results and discuss advantages and drawbacks of such a contact design.Keywords: Contact - 1: Sputtering - 2: Interfaces -- 3",

author = "Dirk Koenig and Gunter Ebest",

year = "2001",

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day = "6",

language = "English",

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note = "European Photovoltaic Solar Energy Conference 2001 ; Conference date: 22-10-2001 Through 26-10-2001",

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TY - CONF

T1 - HOLE COLLECTING CONTACTS BY Pt WITH PtSi FORMATION (poster)

AU - Koenig, Dirk

AU - Ebest, Gunter

PY - 2001/10/6

Y1 - 2001/10/6

N2 - By applying an external negative drift field source for the creation of a p-conduction layer doping can be spared apart from the hole collection contact where p+ doping has to be done. If a metallic layer of sufficiently high electron work function is used a p + contact can be formed as well. Platinum (Pt) is a perfect candidate for such a contact. Unfortunately its performance is limited by the current crowding effect occuring at the edges as the space charge of a Schottky contact is rather small. However, with an area of high electron work function and conductivity underneath the Pt contact the diffusion current flows perpendicular into that region. Platinum Silicide (PtxSi) is a material which fulfills these requirements. It is synthesized by depositing Pt onto a Silicon (Si) substrate and subsequent anneal. In this paper we present experimental results and discuss advantages and drawbacks of such a contact design.Keywords: Contact - 1: Sputtering - 2: Interfaces -- 3

AB - By applying an external negative drift field source for the creation of a p-conduction layer doping can be spared apart from the hole collection contact where p+ doping has to be done. If a metallic layer of sufficiently high electron work function is used a p + contact can be formed as well. Platinum (Pt) is a perfect candidate for such a contact. Unfortunately its performance is limited by the current crowding effect occuring at the edges as the space charge of a Schottky contact is rather small. However, with an area of high electron work function and conductivity underneath the Pt contact the diffusion current flows perpendicular into that region. Platinum Silicide (PtxSi) is a material which fulfills these requirements. It is synthesized by depositing Pt onto a Silicon (Si) substrate and subsequent anneal. In this paper we present experimental results and discuss advantages and drawbacks of such a contact design.Keywords: Contact - 1: Sputtering - 2: Interfaces -- 3

M3 - Poster

SP - 1503

EP - 1506

T2 - European Photovoltaic Solar Energy Conference 2001

Y2 - 22 October 2001 through 26 October 2001

ER -

HOLE COLLECTING CONTACTS BY Pt WITH PtSi FORMATION (poster)

Abstract

Conference

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