Hot electron injection laser controlled carrier-heating induced gain switching

R. C.P. Hoskens; T. G. Van De Roer; E. Smalbrugge; J. J.M. Kwaspen; V. I. Tolstikhin; H. H. Tan; C. Jagadish; G. A. Acket

doi:10.1109/COMMAD.2004.1577573

Hot electron injection laser controlled carrier-heating induced gain switching

R. C.P. Hoskens, T. G. Van De Roer, E. Smalbrugge, J. J.M. Kwaspen, V. I. Tolstikhin, H. H. Tan, C. Jagadish, G. A. Acket

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The novel Hot Electron Injection Laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show the potential of carrier heating assisted gain switching to directly modulate the optical field intensity at frequencies up to 100Ghz while maintaining control over the wavelength chirp. The HEL is designed to demonstrate these results through independent but complementary control over the concentration and the energy of the electrons injected into the active layer. Previous research has shown though that proper LIV behavior and a strong carrier heating efficiency requires a trade-off between electron heating and hole leakage current. Furthermore, stringent control over the epitaxial growth is crucial for these devices. Recent devices now show proper LIV behavior and strongly reduced threshold current densities around 2kA/cm² at room temperature. They also show the external 'heating' voltage modulating the intensity of the lasing mode. The possible link between this modulation and carrier heating is further explored.

Original language	English
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages	397-400
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2004.1577573
Publication status	Published - 2005
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: 8 Dec 2004 → 10 Dec 2004

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	8/12/04 → 10/12/04

Access to Document

10.1109/COMMAD.2004.1577573

Cite this

Hoskens, R. C. P., Van De Roer, T. G., Smalbrugge, E., Kwaspen, J. J. M., Tolstikhin, V. I., Tan, H. H., Jagadish, C., & Acket, G. A. (2005). Hot electron injection laser controlled carrier-heating induced gain switching. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 397-400). Article 1577573 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2004.1577573

@inproceedings{f9ac8c5a94f04a438b5d42377edecb73,

title = "Hot electron injection laser controlled carrier-heating induced gain switching",

abstract = "The novel Hot Electron Injection Laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show the potential of carrier heating assisted gain switching to directly modulate the optical field intensity at frequencies up to 100Ghz while maintaining control over the wavelength chirp. The HEL is designed to demonstrate these results through independent but complementary control over the concentration and the energy of the electrons injected into the active layer. Previous research has shown though that proper LIV behavior and a strong carrier heating efficiency requires a trade-off between electron heating and hole leakage current. Furthermore, stringent control over the epitaxial growth is crucial for these devices. Recent devices now show proper LIV behavior and strongly reduced threshold current densities around 2kA/cm2 at room temperature. They also show the external 'heating' voltage modulating the intensity of the lasing mode. The possible link between this modulation and carrier heating is further explored.",

keywords = "Carrier heating, Chirp, Direct modulation, Heterojunction bipolar transistor, Hot electrons, Laser diode, Ultrafast modulation",

author = "Hoskens, {R. C.P.} and {Van De Roer}, {T. G.} and E. Smalbrugge and Kwaspen, {J. J.M.} and Tolstikhin, {V. I.} and Tan, {H. H.} and C. Jagadish and Acket, {G. A.}",

year = "2005",

doi = "10.1109/COMMAD.2004.1577573",

language = "English",

isbn = "0780388208",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "397--400",

booktitle = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings",

note = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 08-12-2004 Through 10-12-2004",

}

Hoskens, RCP, Van De Roer, TG, Smalbrugge, E, Kwaspen, JJM, Tolstikhin, VI, Tan, HH , Jagadish, C & Acket, GA 2005, Hot electron injection laser controlled carrier-heating induced gain switching. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577573, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 397-400, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 8/12/04. https://doi.org/10.1109/COMMAD.2004.1577573

Hot electron injection laser controlled carrier-heating induced gain switching. / Hoskens, R. C.P.; Van De Roer, T. G.; Smalbrugge, E. et al.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 397-400 1577573 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Hot electron injection laser controlled carrier-heating induced gain switching

AU - Hoskens, R. C.P.

AU - Van De Roer, T. G.

AU - Smalbrugge, E.

AU - Kwaspen, J. J.M.

AU - Tolstikhin, V. I.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Acket, G. A.

PY - 2005

Y1 - 2005

N2 - The novel Hot Electron Injection Laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show the potential of carrier heating assisted gain switching to directly modulate the optical field intensity at frequencies up to 100Ghz while maintaining control over the wavelength chirp. The HEL is designed to demonstrate these results through independent but complementary control over the concentration and the energy of the electrons injected into the active layer. Previous research has shown though that proper LIV behavior and a strong carrier heating efficiency requires a trade-off between electron heating and hole leakage current. Furthermore, stringent control over the epitaxial growth is crucial for these devices. Recent devices now show proper LIV behavior and strongly reduced threshold current densities around 2kA/cm2 at room temperature. They also show the external 'heating' voltage modulating the intensity of the lasing mode. The possible link between this modulation and carrier heating is further explored.

AB - The novel Hot Electron Injection Laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show the potential of carrier heating assisted gain switching to directly modulate the optical field intensity at frequencies up to 100Ghz while maintaining control over the wavelength chirp. The HEL is designed to demonstrate these results through independent but complementary control over the concentration and the energy of the electrons injected into the active layer. Previous research has shown though that proper LIV behavior and a strong carrier heating efficiency requires a trade-off between electron heating and hole leakage current. Furthermore, stringent control over the epitaxial growth is crucial for these devices. Recent devices now show proper LIV behavior and strongly reduced threshold current densities around 2kA/cm2 at room temperature. They also show the external 'heating' voltage modulating the intensity of the lasing mode. The possible link between this modulation and carrier heating is further explored.

KW - Carrier heating

KW - Chirp

KW - Direct modulation

KW - Heterojunction bipolar transistor

KW - Hot electrons

KW - Laser diode

KW - Ultrafast modulation

UR - http://www.scopus.com/inward/record.url?scp=46149105685&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2004.1577573

DO - 10.1109/COMMAD.2004.1577573

M3 - Conference contribution

SN - 0780388208

SN - 9780780388208

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 397

EP - 400

BT - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings

T2 - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 8 December 2004 through 10 December 2004

ER -

Hoskens RCP, Van De Roer TG, Smalbrugge E, Kwaspen JJM, Tolstikhin VI, Tan HH et al. Hot electron injection laser controlled carrier-heating induced gain switching. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 397-400. 1577573. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2004.1577573

Hot electron injection laser controlled carrier-heating induced gain switching

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this