How InAs crystal phase affects the electrical performance of InAs nanowire FETs

A. R. Ullah; H. J. Joyce; A. M. Burke; J. Wong-Leung; H. H. Tan; C. Jagadish; A. P. Micolich

doi:10.1109/COMMAD.2014.7038712

How InAs crystal phase affects the electrical performance of InAs nanowire FETs

A. R. Ullah, H. J. Joyce, A. M. Burke, J. Wong-Leung, H. H. Tan, C. Jagadish, A. P. Micolich

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

2 Citations (Scopus)

Abstract

We have studied the electronic transport characteristics of nanowire field effect transistors (NWFETs) made from phase-pure wurtzite (WZ) and zinc blende (ZB) InAs nanowires (NWs). The electronic characteristics were obtained at temperatures between 4 and 300 K. The ZB NWFETs exhibited a greater sensitivity to the surrounding atmosphere than WZ NWFETs. The WZ NWFETs had a higher mobility than ZB NWFETs at a given temperature. We also found that WZ NWs had a higher carrier density than ZB NWs at most temperatures, presumably due to differences in carbon incorporation during growth.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	283-285
Number of pages	3
ISBN (Electronic)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038712
Publication status	Published - 10 Feb 2014
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

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10.1109/COMMAD.2014.7038712

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Ullah, A. R., Joyce, H. J., Burke, A. M., Wong-Leung, J., Tan, H. H., Jagadish, C., & Micolich, A. P. (2014). How InAs crystal phase affects the electrical performance of InAs nanowire FETs. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 283-285). Article 7038712 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038712

Ullah, A. R. ; Joyce, H. J. ; Burke, A. M. et al. / How InAs crystal phase affects the electrical performance of InAs nanowire FETs. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 283-285 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

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title = "How InAs crystal phase affects the electrical performance of InAs nanowire FETs",

abstract = "We have studied the electronic transport characteristics of nanowire field effect transistors (NWFETs) made from phase-pure wurtzite (WZ) and zinc blende (ZB) InAs nanowires (NWs). The electronic characteristics were obtained at temperatures between 4 and 300 K. The ZB NWFETs exhibited a greater sensitivity to the surrounding atmosphere than WZ NWFETs. The WZ NWFETs had a higher mobility than ZB NWFETs at a given temperature. We also found that WZ NWs had a higher carrier density than ZB NWs at most temperatures, presumably due to differences in carbon incorporation during growth.",

keywords = "InAs, nanowire FETs, wurtzite, zinc blende",

author = "Ullah, \{A. R.\} and Joyce, \{H. J.\} and Burke, \{A. M.\} and J. Wong-Leung and Tan, \{H. H.\} and C. Jagadish and Micolich, \{A. P.\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

year = "2014",

month = feb,

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doi = "10.1109/COMMAD.2014.7038712",

language = "English",

series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "283--285",

editor = "Mariusz Martyniuk and Lorenzo Faraone",

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}

Ullah, AR, Joyce, HJ, Burke, AM, Wong-Leung, J, Tan, HH , Jagadish, C & Micolich, AP 2014, How InAs crystal phase affects the electrical performance of InAs nanowire FETs. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038712, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., pp. 283-285, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038712

How InAs crystal phase affects the electrical performance of InAs nanowire FETs. / Ullah, A. R.; Joyce, H. J.; Burke, A. M. et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. p. 283-285 7038712 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - How InAs crystal phase affects the electrical performance of InAs nanowire FETs

AU - Ullah, A. R.

AU - Joyce, H. J.

AU - Burke, A. M.

AU - Wong-Leung, J.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Micolich, A. P.

PY - 2014/2/10

Y1 - 2014/2/10

N2 - We have studied the electronic transport characteristics of nanowire field effect transistors (NWFETs) made from phase-pure wurtzite (WZ) and zinc blende (ZB) InAs nanowires (NWs). The electronic characteristics were obtained at temperatures between 4 and 300 K. The ZB NWFETs exhibited a greater sensitivity to the surrounding atmosphere than WZ NWFETs. The WZ NWFETs had a higher mobility than ZB NWFETs at a given temperature. We also found that WZ NWs had a higher carrier density than ZB NWs at most temperatures, presumably due to differences in carbon incorporation during growth.

AB - We have studied the electronic transport characteristics of nanowire field effect transistors (NWFETs) made from phase-pure wurtzite (WZ) and zinc blende (ZB) InAs nanowires (NWs). The electronic characteristics were obtained at temperatures between 4 and 300 K. The ZB NWFETs exhibited a greater sensitivity to the surrounding atmosphere than WZ NWFETs. The WZ NWFETs had a higher mobility than ZB NWFETs at a given temperature. We also found that WZ NWs had a higher carrier density than ZB NWs at most temperatures, presumably due to differences in carbon incorporation during growth.

KW - InAs

KW - nanowire FETs

KW - wurtzite

KW - zinc blende

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U2 - 10.1109/COMMAD.2014.7038712

DO - 10.1109/COMMAD.2014.7038712

M3 - Conference Paper

T3 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

SP - 283

EP - 285

BT - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

A2 - Martyniuk, Mariusz

A2 - Faraone, Lorenzo

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

Ullah AR, Joyce HJ, Burke AM, Wong-Leung J, Tan HH , Jagadish C et al. How InAs crystal phase affects the electrical performance of InAs nanowire FETs. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 283-285. 7038712. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038712

How InAs crystal phase affects the electrical performance of InAs nanowire FETs

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