How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study

M. O. Ruault; F. Fortuna; H. Bernas; M. C. Ridgway; J. S. Williams

doi:10.1063/1.1509854

How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study

M. O. Ruault^*, F. Fortuna, H. Bernas, M. C. Ridgway, J. S. Williams

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Nanocavities were formed in Si substrates by conventional H implantation and thermal annealing, after which the samples were amorphized by Si ion irradiation. The size evolution of the nanocavities was monitored in situ during further ion irradiation with Si or As at temperatures of 300 or 600 K. The decrease in nanocavity diameter during ion irradiation depended linearly on the ion fluence. The rate of shrinkage differed according to the ion beam-induced atomic displacement rate and had little or no temperature dependence. These in situ results shed new light on possible ion-beam-induced nanocavity shrinkage mechanisms.

Original language	English
Pages (from-to)	2617-2619
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	14
DOIs	https://doi.org/10.1063/1.1509854
Publication status	Published - 30 Sept 2002

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abstract = "Nanocavities were formed in Si substrates by conventional H implantation and thermal annealing, after which the samples were amorphized by Si ion irradiation. The size evolution of the nanocavities was monitored in situ during further ion irradiation with Si or As at temperatures of 300 or 600 K. The decrease in nanocavity diameter during ion irradiation depended linearly on the ion fluence. The rate of shrinkage differed according to the ion beam-induced atomic displacement rate and had little or no temperature dependence. These in situ results shed new light on possible ion-beam-induced nanocavity shrinkage mechanisms.",

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AU - Ruault, M. O.

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AU - Bernas, H.

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AU - Williams, J. S.

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AB - Nanocavities were formed in Si substrates by conventional H implantation and thermal annealing, after which the samples were amorphized by Si ion irradiation. The size evolution of the nanocavities was monitored in situ during further ion irradiation with Si or As at temperatures of 300 or 600 K. The decrease in nanocavity diameter during ion irradiation depended linearly on the ion fluence. The rate of shrinkage differed according to the ion beam-induced atomic displacement rate and had little or no temperature dependence. These in situ results shed new light on possible ion-beam-induced nanocavity shrinkage mechanisms.

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How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study

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