HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers

N. Sathish; S. Dhamodaran; A. P. Pathak; M. Ghanashyam Krishna; S. A. Khan; D. K. Avasthi; A. Pandey; R. Muralidharan; G. Li; C. Jagadish

doi:10.1016/j.nimb.2006.12.060

HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers

N. Sathish, S. Dhamodaran, A. P. Pathak^*, M. Ghanashyam Krishna, S. A. Khan, D. K. Avasthi, A. Pandey, R. Muralidharan, G. Li, C. Jagadish

^*Corresponding author for this work

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23 Citations (Scopus)

Abstract

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with 150 MeV Ag ions at a fluence of 5 × 10¹² ions/cm². Samples used in this study are 2 μm thick GaN layers, with and without a thin AlN cap-layer. Surface morphology is studied using contact mode atomic force microscopy (AFM). Irradiated samples show qualitatively different morphologies as well as quantitative changes. Different kinds of morphology are attributed to specific type of dislocations using the existing models available in the literature. The residual strain and sample quality have been analysed before and after irradiation using high resolution X-ray diffraction (HRXRD). The Lorentzian shape analyses of the experimental scans complement the AFM results. Optical properties are studied by spectrophotometer used in the transmission mode. A sharp band-edge in the as grown samples was observed at ∼3.4 eV. The band-edge absorption broadened due to irradiation and these results have been discussed in view of the damage created by the incident ions which compliment HRXRD results. In general the effect of irradiation induced-damages are analysed as a function of material properties. A possible mechanism responsible for the observations has been discussed.

Original language	English
Pages (from-to)	281-287
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	256
Issue number	1
DOIs	https://doi.org/10.1016/j.nimb.2006.12.060
Publication status	Published - Mar 2007

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10.1016/j.nimb.2006.12.060

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Sathish, N., Dhamodaran, S., Pathak, A. P., Ghanashyam Krishna, M., Khan, S. A., Avasthi, D. K., Pandey, A., Muralidharan, R., Li, G., & Jagadish, C. (2007). HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 256(1), 281-287. https://doi.org/10.1016/j.nimb.2006.12.060

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title = "HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers",

abstract = "Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with 150 MeV Ag ions at a fluence of 5 × 1012 ions/cm2. Samples used in this study are 2 μm thick GaN layers, with and without a thin AlN cap-layer. Surface morphology is studied using contact mode atomic force microscopy (AFM). Irradiated samples show qualitatively different morphologies as well as quantitative changes. Different kinds of morphology are attributed to specific type of dislocations using the existing models available in the literature. The residual strain and sample quality have been analysed before and after irradiation using high resolution X-ray diffraction (HRXRD). The Lorentzian shape analyses of the experimental scans complement the AFM results. Optical properties are studied by spectrophotometer used in the transmission mode. A sharp band-edge in the as grown samples was observed at ∼3.4 eV. The band-edge absorption broadened due to irradiation and these results have been discussed in view of the damage created by the incident ions which compliment HRXRD results. In general the effect of irradiation induced-damages are analysed as a function of material properties. A possible mechanism responsible for the observations has been discussed.",

keywords = "AFM, HRXRD, Ion irradiation, Optical and GaN",

author = "N. Sathish and S. Dhamodaran and Pathak, {A. P.} and {Ghanashyam Krishna}, M. and Khan, {S. A.} and Avasthi, {D. K.} and A. Pandey and R. Muralidharan and G. Li and C. Jagadish",

year = "2007",

month = mar,

doi = "10.1016/j.nimb.2006.12.060",

language = "English",

volume = "256",

pages = "281--287",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

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Sathish, N, Dhamodaran, S, Pathak, AP, Ghanashyam Krishna, M, Khan, SA, Avasthi, DK, Pandey, A, Muralidharan, R, Li, G & Jagadish, C 2007, 'HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 256, no. 1, pp. 281-287. https://doi.org/10.1016/j.nimb.2006.12.060

HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers. / Sathish, N.; Dhamodaran, S.; Pathak, A. P. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 256, No. 1, 03.2007, p. 281-287.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers

AU - Sathish, N.

AU - Dhamodaran, S.

AU - Pathak, A. P.

AU - Ghanashyam Krishna, M.

AU - Khan, S. A.

AU - Avasthi, D. K.

AU - Pandey, A.

AU - Muralidharan, R.

AU - Li, G.

AU - Jagadish, C.

PY - 2007/3

Y1 - 2007/3

N2 - Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with 150 MeV Ag ions at a fluence of 5 × 1012 ions/cm2. Samples used in this study are 2 μm thick GaN layers, with and without a thin AlN cap-layer. Surface morphology is studied using contact mode atomic force microscopy (AFM). Irradiated samples show qualitatively different morphologies as well as quantitative changes. Different kinds of morphology are attributed to specific type of dislocations using the existing models available in the literature. The residual strain and sample quality have been analysed before and after irradiation using high resolution X-ray diffraction (HRXRD). The Lorentzian shape analyses of the experimental scans complement the AFM results. Optical properties are studied by spectrophotometer used in the transmission mode. A sharp band-edge in the as grown samples was observed at ∼3.4 eV. The band-edge absorption broadened due to irradiation and these results have been discussed in view of the damage created by the incident ions which compliment HRXRD results. In general the effect of irradiation induced-damages are analysed as a function of material properties. A possible mechanism responsible for the observations has been discussed.

AB - Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates are irradiated with 150 MeV Ag ions at a fluence of 5 × 1012 ions/cm2. Samples used in this study are 2 μm thick GaN layers, with and without a thin AlN cap-layer. Surface morphology is studied using contact mode atomic force microscopy (AFM). Irradiated samples show qualitatively different morphologies as well as quantitative changes. Different kinds of morphology are attributed to specific type of dislocations using the existing models available in the literature. The residual strain and sample quality have been analysed before and after irradiation using high resolution X-ray diffraction (HRXRD). The Lorentzian shape analyses of the experimental scans complement the AFM results. Optical properties are studied by spectrophotometer used in the transmission mode. A sharp band-edge in the as grown samples was observed at ∼3.4 eV. The band-edge absorption broadened due to irradiation and these results have been discussed in view of the damage created by the incident ions which compliment HRXRD results. In general the effect of irradiation induced-damages are analysed as a function of material properties. A possible mechanism responsible for the observations has been discussed.

KW - AFM

KW - HRXRD

KW - Ion irradiation

KW - Optical and GaN

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U2 - 10.1016/j.nimb.2006.12.060

DO - 10.1016/j.nimb.2006.12.060

M3 - Article

SN - 0168-583X

VL - 256

SP - 281

EP - 287

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1

ER -

HRXRD, AFM and optical study of damage created by swift heavy ion irradiation in GaN epitaxial layers

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