Hydrogen contamination in Ge-doped SiO2 thin films prepared by helicon activated reactive evaporation

W. T. Li; D. A.P. Bulla; J. Love; B. Luther-Davies; C. Charles; R. Boswell

doi:10.1116/1.1570842

Hydrogen contamination in Ge-doped SiO₂ thin films prepared by helicon activated reactive evaporation

W. T. Li^*, D. A.P. Bulla, J. Love, B. Luther-Davies, C. Charles, R. Boswell

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Nearly OH-free Ge-SiO_x films with a smooth surface and high density were deposited using an improved HARE technique. The H contamination in the films was found to occur both during and after deposition. Predeposition Ar-plasma baking of the reactor was observed to be useful for water desorption from the walls of the vacuum system.

Original language	English
Pages (from-to)	792-796
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	3
DOIs	https://doi.org/10.1116/1.1570842
Publication status	Published - May 2003

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title = "Hydrogen contamination in Ge-doped SiO2 thin films prepared by helicon activated reactive evaporation",

abstract = "Nearly OH-free Ge-SiOx films with a smooth surface and high density were deposited using an improved HARE technique. The H contamination in the films was found to occur both during and after deposition. Predeposition Ar-plasma baking of the reactor was observed to be useful for water desorption from the walls of the vacuum system.",

author = "Li, \{W. T.\} and Bulla, \{D. A.P.\} and J. Love and B. Luther-Davies and C. Charles and R. Boswell",

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T1 - Hydrogen contamination in Ge-doped SiO2 thin films prepared by helicon activated reactive evaporation

AU - Li, W. T.

AU - Bulla, D. A.P.

AU - Love, J.

AU - Luther-Davies, B.

AU - Charles, C.

AU - Boswell, R.

PY - 2003/5

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N2 - Nearly OH-free Ge-SiOx films with a smooth surface and high density were deposited using an improved HARE technique. The H contamination in the films was found to occur both during and after deposition. Predeposition Ar-plasma baking of the reactor was observed to be useful for water desorption from the walls of the vacuum system.

AB - Nearly OH-free Ge-SiOx films with a smooth surface and high density were deposited using an improved HARE technique. The H contamination in the films was found to occur both during and after deposition. Predeposition Ar-plasma baking of the reactor was observed to be useful for water desorption from the walls of the vacuum system.

UR - https://www.scopus.com/pages/publications/0037665292

U2 - 10.1116/1.1570842

DO - 10.1116/1.1570842

M3 - Article

SN - 0734-2101

VL - 21

SP - 792

EP - 796

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Hydrogen contamination in Ge-doped SiO₂ thin films prepared by helicon activated reactive evaporation

Abstract

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