Hydrogen interaction with implantation induced point defects in p-type silicon

S. Fatima; C. Jagadish; J. Lalita; B. G. Svensson; A. Hállen

doi:10.1063/1.369575

Hydrogen interaction with implantation induced point defects in p-type silicon

S. Fatima^*, C. Jagadish, J. Lalita, B. G. Svensson, A. Hállen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Interaction of hydrogen with implantation induced point defects in p-type Si has been monitored using deep level transient spectroscopy. H ions are implanted into p-Si using low doses in the range from 10⁹ to 10¹⁰ cm^-2. Vacancy and interstitial related defects are observed. Besides irradiation induced defects with levels at E_v + 0.19 and E_v + 0.35 eV, two additional defect levels at 0.28 and 0.51 eV above the valence band edge (E_v) are resolved. They are identified as hydrogen related after comparison with He, B, and C implanted p-type Si. The generation of these defect levels, in the presence of hydrogen, has been studied as a function of ion dose, sample depth, and impurity content in the as grown Si. The level at E_v + 0.19 eV shows a saturation effect for higher hydrogen doses. This is attributed to passivation by mobile hydrogen through the formation of neutral complexes. The level at E_v + 0.51 eV has been assigned to be a complex involving H and B interstitials.

Original language	English
Pages (from-to)	2562-2567
Number of pages	6
Journal	Journal of Applied Physics
Volume	85
Issue number	5
DOIs	https://doi.org/10.1063/1.369575
Publication status	Published - 1999

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title = "Hydrogen interaction with implantation induced point defects in p-type silicon",

abstract = "Interaction of hydrogen with implantation induced point defects in p-type Si has been monitored using deep level transient spectroscopy. H ions are implanted into p-Si using low doses in the range from 109 to 1010 cm-2. Vacancy and interstitial related defects are observed. Besides irradiation induced defects with levels at Ev + 0.19 and Ev + 0.35 eV, two additional defect levels at 0.28 and 0.51 eV above the valence band edge (Ev) are resolved. They are identified as hydrogen related after comparison with He, B, and C implanted p-type Si. The generation of these defect levels, in the presence of hydrogen, has been studied as a function of ion dose, sample depth, and impurity content in the as grown Si. The level at Ev + 0.19 eV shows a saturation effect for higher hydrogen doses. This is attributed to passivation by mobile hydrogen through the formation of neutral complexes. The level at Ev + 0.51 eV has been assigned to be a complex involving H and B interstitials.",

author = "S. Fatima and C. Jagadish and J. Lalita and Svensson, \{B. G.\} and A. H{\'a}llen",

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doi = "10.1063/1.369575",

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T1 - Hydrogen interaction with implantation induced point defects in p-type silicon

AU - Fatima, S.

AU - Jagadish, C.

AU - Lalita, J.

AU - Svensson, B. G.

AU - Hállen, A.

PY - 1999

Y1 - 1999

N2 - Interaction of hydrogen with implantation induced point defects in p-type Si has been monitored using deep level transient spectroscopy. H ions are implanted into p-Si using low doses in the range from 109 to 1010 cm-2. Vacancy and interstitial related defects are observed. Besides irradiation induced defects with levels at Ev + 0.19 and Ev + 0.35 eV, two additional defect levels at 0.28 and 0.51 eV above the valence band edge (Ev) are resolved. They are identified as hydrogen related after comparison with He, B, and C implanted p-type Si. The generation of these defect levels, in the presence of hydrogen, has been studied as a function of ion dose, sample depth, and impurity content in the as grown Si. The level at Ev + 0.19 eV shows a saturation effect for higher hydrogen doses. This is attributed to passivation by mobile hydrogen through the formation of neutral complexes. The level at Ev + 0.51 eV has been assigned to be a complex involving H and B interstitials.

AB - Interaction of hydrogen with implantation induced point defects in p-type Si has been monitored using deep level transient spectroscopy. H ions are implanted into p-Si using low doses in the range from 109 to 1010 cm-2. Vacancy and interstitial related defects are observed. Besides irradiation induced defects with levels at Ev + 0.19 and Ev + 0.35 eV, two additional defect levels at 0.28 and 0.51 eV above the valence band edge (Ev) are resolved. They are identified as hydrogen related after comparison with He, B, and C implanted p-type Si. The generation of these defect levels, in the presence of hydrogen, has been studied as a function of ion dose, sample depth, and impurity content in the as grown Si. The level at Ev + 0.19 eV shows a saturation effect for higher hydrogen doses. This is attributed to passivation by mobile hydrogen through the formation of neutral complexes. The level at Ev + 0.51 eV has been assigned to be a complex involving H and B interstitials.

UR - https://www.scopus.com/pages/publications/0000899930

U2 - 10.1063/1.369575

DO - 10.1063/1.369575

M3 - Article

SN - 0021-8979

VL - 85

SP - 2562

EP - 2567

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Hydrogen interaction with implantation induced point defects in p-type silicon

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