Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films

Anyao Liu; Chang Sun; Daniel MacDonald

doi:10.4229/EUPVSEC20152015-2AV.1.40

Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 900oC with the silicon nitride films present. The most effective hydrogenation of iron was found to take place at 700oC, where more than 99% of iron was passivated after 30 minutes. Results show that the observed reductions in the interstitial iron concentrations are not likely to be caused by the precipitation of iron at structural defects by a hydrogen-enhanced diffusivity of iron, as has previously been suggested.

Original language	English
Title of host publication	Proceedings of the European Photovoltaic Solar Energy Conference and Exhibition
Place of Publication	Germany
Publisher	Fraunhofer ISE
Pages	623-625
Edition	Peer Reviewed
ISBN (Print)	3936338396
DOIs	https://doi.org/10.4229/EUPVSEC20152015-2AV.1.40
Publication status	Published - 2015
Event	European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015 - Hamburg, Germany, Germany Duration: 1 Jan 2015 → … http://publica.fraunhofer.de/ise/2015-conference.htm

Conference

Conference	European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015
Country/Territory	Germany
Period	1/01/15 → …
Other	September 14-18 2015
Internet address	http://publica.fraunhofer.de/ise/2015-conference.htm

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10.4229/EUPVSEC20152015-2AV.1.40

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@inproceedings{6515642f93834a8695fc9460503fbec5,

title = "Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films",

abstract = "This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 900oC with the silicon nitride films present. The most effective hydrogenation of iron was found to take place at 700oC, where more than 99% of iron was passivated after 30 minutes. Results show that the observed reductions in the interstitial iron concentrations are not likely to be caused by the precipitation of iron at structural defects by a hydrogen-enhanced diffusivity of iron, as has previously been suggested.",

author = "Anyao Liu and Chang Sun and Daniel MacDonald",

year = "2015",

doi = "10.4229/EUPVSEC20152015-2AV.1.40",

language = "English",

isbn = "3936338396",

pages = "623--625",

booktitle = "Proceedings of the European Photovoltaic Solar Energy Conference and Exhibition",

publisher = "Fraunhofer ISE",

edition = "Peer Reviewed",

note = "European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015 ; Conference date: 01-01-2015",

url = "http://publica.fraunhofer.de/ise/2015-conference.htm",

}

Liu, A, Sun, C & MacDonald, D 2015, Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films. in Proceedings of the European Photovoltaic Solar Energy Conference and Exhibition. Peer Reviewed edn, Fraunhofer ISE, Germany, pp. 623-625, European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015, Germany, 1/01/15. https://doi.org/10.4229/EUPVSEC20152015-2AV.1.40

Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films. / Liu, Anyao; Sun, Chang; MacDonald, Daniel.
Proceedings of the European Photovoltaic Solar Energy Conference and Exhibition. Peer Reviewed. ed. Germany: Fraunhofer ISE, 2015. p. 623-625.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films

AU - Liu, Anyao

AU - Sun, Chang

AU - MacDonald, Daniel

PY - 2015

Y1 - 2015

N2 - This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 900oC with the silicon nitride films present. The most effective hydrogenation of iron was found to take place at 700oC, where more than 99% of iron was passivated after 30 minutes. Results show that the observed reductions in the interstitial iron concentrations are not likely to be caused by the precipitation of iron at structural defects by a hydrogen-enhanced diffusivity of iron, as has previously been suggested.

AB - This paper reports on the effective passivation of interstitial iron in p-type boron-doped silicon via annealing with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films. The concentration of interstitial iron was shown to reduce by more than 90% after a 30-minute anneal at 600 900oC with the silicon nitride films present. The most effective hydrogenation of iron was found to take place at 700oC, where more than 99% of iron was passivated after 30 minutes. Results show that the observed reductions in the interstitial iron concentrations are not likely to be caused by the precipitation of iron at structural defects by a hydrogen-enhanced diffusivity of iron, as has previously been suggested.

U2 - 10.4229/EUPVSEC20152015-2AV.1.40

DO - 10.4229/EUPVSEC20152015-2AV.1.40

M3 - Conference contribution

SN - 3936338396

SP - 623

EP - 625

BT - Proceedings of the European Photovoltaic Solar Energy Conference and Exhibition

PB - Fraunhofer ISE

CY - Germany

T2 - European Photovoltaic Solar Energy Conference and Exhibition EU PVSEC 2015

Y2 - 1 January 2015

ER -

Hydrogen passivation of Interstitial Iron in Silicon by Annealing with PECVD Silicon Nitride Films

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