Hydrogenation Mechanisms of Poly-Si/SiO_x Passivating Contacts by Different Capping Layers

Engineering

• Defects 100%
• Capping Layer 100%
• Hydrogenation 100%
• Dangling Bond 66%
• Posttreatment 66%
• Atomic Layer Deposition 33%
• Silicon Solar Cell 33%
• Low-Temperature 33%
• Chemical Vapor Deposition 33%
• Vapor Deposition 33%
• Carrier Lifetime 33%
• Nitride 33%
• Fourier Transform 33%
• Open Circuit Voltage 33%
• Minority Carriers 33%
• Si Substrate 33%
• Aluminum Oxide 33%
• Phase Present 33%

Material Science

• Crystalline Material 100%
• Electrical Resistivity 100%
• Hydrogenation 100%
• Film 66%
• Electronic Circuit 33%
• Silicon Nitride 33%
• Silicon Solar Cell 33%
• Amorphous Material 33%
• Carrier Lifetime 33%
• Fourier Transform Infrared Spectroscopy 33%
• Photoluminescence 33%
• Aluminum Oxide 33%
• Secondary Ion Mass Spectrometry 33%
• Plasma-Enhanced Chemical Vapor Deposition 33%
• Mass Spectrometry 33%