Hyperdoped silicon characterization and photodetectors

Yining Liu*, Wenjie Yang, Quentin Hudspeth, Jeffrey M. Warrender, James S. Williams, Jay Mathews

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Hyperdoped silicon is a promising material for infrared detection via intermediate band absorption. In this work, enhancement of IR absorption of hyperdoped silicon is demonstrated and methods for fabrication of Ohmic contacts are explored.

    Original languageEnglish
    Title of host publicationFrontiers in Optics, FiO 2017
    PublisherOptica Publishing Group
    ISBN (Print)9781943580330
    DOIs
    Publication statusPublished - 2017
    EventFrontiers in Optics, FiO 2017 - Washington, United States
    Duration: 18 Sept 201721 Sept 2017

    Publication series

    NameOptics InfoBase Conference Papers
    VolumePart F66-FiO 2017
    ISSN (Electronic)2162-2701

    Conference

    ConferenceFrontiers in Optics, FiO 2017
    Country/TerritoryUnited States
    CityWashington
    Period18/09/1721/09/17

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