Hyperdoped silicon sub-band gap photoresponse for an intermediate band solar cell in silicon

Jonathan P. Mailoa, Austin J. Akey, Christie B. Simmons, David Hutchinson, Jay Mathews, Joseph T. Sullivan, Daniel Recht, Mark T. Winkler, James S. Williams, Jeffrey M. Warrender, Peter D. Persans, Michael J. Aziz, Tonio Buonassisi

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Citations (Scopus)

    Abstract

    Hyperdoping silicon with impurities is considered an attractive method to develop an intermediate band solar cell in silicon with the potential to increase the photovoltaic cell efficiency beyond that of the Shockley-Queisser limit by utilizing sub-band gap photons for energy generation. Unfortunately, to date sub-band gap photoresponse has not been observed in singlecrystal hyperdoped silicon at room temperature, which is crucial for the development of intermediate band solar cells. In this contribution, we report and analyze room-temperature sub-band gap photoresponse of single-crystal silicon hyperdoped with gold. We further discuss the potential of using gold-hyperdoped silicon for IBSC in silicon.

    Original languageEnglish
    Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages1073-1076
    Number of pages4
    ISBN (Electronic)9781479943982
    DOIs
    Publication statusPublished - 15 Oct 2014
    Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
    Duration: 8 Jun 201413 Jun 2014

    Publication series

    Name2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

    Conference

    Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
    Country/TerritoryUnited States
    CityDenver
    Period8/06/1413/06/14

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