Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants

Jeffrey M. Warrender; Jay Mathews; Quentin Hudspeth; Philippe K. Chow; Wenjie Yang; Austin J. Akey; James S. Williams

doi:10.1109/PHOSST.2017.8012683

Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants

Jeffrey M. Warrender^*, Jay Mathews, Quentin Hudspeth, Philippe K. Chow, Wenjie Yang, Austin J. Akey, James S. Williams

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Hyperdoping silicon with transition metals offers the potential of subbandgap photodetection, but metal impurities can be difficult to kinetically trap. Instabilities during solidification introduce large length-scale defects. We present guidelines for avoiding these instabilities, and electronic properties for layers that do not exhibit them.

Original language	English
Title of host publication	Summer Topicals Meeting Series, SUM 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	127-128
Number of pages	2
ISBN (Electronic)	9781509065707
DOIs	https://doi.org/10.1109/PHOSST.2017.8012683
Publication status	Published - 17 Aug 2017
Event	2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017 - San Juan, Puerto Rico Duration: 10 Jul 2017 → 12 Jul 2017

Publication series

Name	Summer Topicals Meeting Series, SUM 2017

Conference

Conference	2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017
Country/Territory	Puerto Rico
City	San Juan
Period	10/07/17 → 12/07/17

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10.1109/PHOSST.2017.8012683

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Warrender, J. M., Mathews, J., Hudspeth, Q., Chow, P. K., Yang, W., Akey, A. J., & Williams, J. S. (2017). Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants. In Summer Topicals Meeting Series, SUM 2017 (pp. 127-128). Article 8012683 (Summer Topicals Meeting Series, SUM 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2017.8012683

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title = "Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants",

abstract = "Hyperdoping silicon with transition metals offers the potential of subbandgap photodetection, but metal impurities can be difficult to kinetically trap. Instabilities during solidification introduce large length-scale defects. We present guidelines for avoiding these instabilities, and electronic properties for layers that do not exhibit them.",

author = "Warrender, {Jeffrey M.} and Jay Mathews and Quentin Hudspeth and Chow, {Philippe K.} and Wenjie Yang and Akey, {Austin J.} and Williams, {James S.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017 ; Conference date: 10-07-2017 Through 12-07-2017",

year = "2017",

month = aug,

day = "17",

doi = "10.1109/PHOSST.2017.8012683",

language = "English",

series = "Summer Topicals Meeting Series, SUM 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "127--128",

booktitle = "Summer Topicals Meeting Series, SUM 2017",

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Warrender, JM, Mathews, J, Hudspeth, Q, Chow, PK, Yang, W, Akey, AJ & Williams, JS 2017, Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants. in Summer Topicals Meeting Series, SUM 2017., 8012683, Summer Topicals Meeting Series, SUM 2017, Institute of Electrical and Electronics Engineers Inc., pp. 127-128, 2017 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2017, San Juan, Puerto Rico, 10/07/17. https://doi.org/10.1109/PHOSST.2017.8012683

Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants. / Warrender, Jeffrey M.; Mathews, Jay; Hudspeth, Quentin et al.
Summer Topicals Meeting Series, SUM 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 127-128 8012683 (Summer Topicals Meeting Series, SUM 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Hyperdoping silicon beyond sulfur

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AU - Warrender, Jeffrey M.

AU - Mathews, Jay

AU - Hudspeth, Quentin

AU - Chow, Philippe K.

AU - Yang, Wenjie

AU - Akey, Austin J.

AU - Williams, James S.

PY - 2017/8/17

Y1 - 2017/8/17

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AB - Hyperdoping silicon with transition metals offers the potential of subbandgap photodetection, but metal impurities can be difficult to kinetically trap. Instabilities during solidification introduce large length-scale defects. We present guidelines for avoiding these instabilities, and electronic properties for layers that do not exhibit them.

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T3 - Summer Topicals Meeting Series, SUM 2017

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BT - Summer Topicals Meeting Series, SUM 2017

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 10 July 2017 through 12 July 2017

ER -

Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants

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